在100mm InP基板上实现0.1 /spl μ m InP HEMT MMIC技术的高性能和高可靠性

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381123

R. Lai, Y. Chou, L.J. Lee, P. Liu, D. Leung, Q. Kan, X. Mei, C.H. Lin, D. Farkas, M. Barsky, D. Eng, A. Cavus, M. Lange, P. Chin, M. Wojtowicz, T. Block, A. Oki

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引用次数: 5

摘要

在100mm InP衬底上的均匀毫米波0.1 μ m InP HEMT mmic (ka波段，q波段，w波段和分布式放大器)已经被证明。此外，还实现了高性能和高可靠性。结果表明，100毫米InP HEMT技术的准备就绪，可用于支持军事/空间应用。

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High Performance and High Reliability of 0.1 /spl mu/m InP HEMT MMIC Technology on 100 mm InP Substrates

Uniform millimeter wave 0.1 mum InP HEMT MMICs (Ka-band, Q-band, W-band, and distributed amplifiers) on 100 mm InP substrates have been demonstrated. Moreover, high performance and high reliability have been achieved. The results indicate that the readiness of 100 mm InP HEMT technology for insertion to support military/space applications.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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