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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials最新文献

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InAs Quantum Dots Grown on Selective Areas with a Metal Mask for Photonic-Crystal-Based Ultra-Small and Ultra-Fast All Optical Devices 利用金属掩膜在选择性区域生长的InAs量子点用于基于光子晶体的超小型超快全光器件
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381235
N. Ozaki, Y. Takata, S. Ohkouchi, Y. Sugimoto, N. Ikeda, Y. Watanabe, Y. Kitagawa, A. Mizutani, K. Asakawa
{"title":"InAs Quantum Dots Grown on Selective Areas with a Metal Mask for Photonic-Crystal-Based Ultra-Small and Ultra-Fast All Optical Devices","authors":"N. Ozaki, Y. Takata, S. Ohkouchi, Y. Sugimoto, N. Ikeda, Y. Watanabe, Y. Kitagawa, A. Mizutani, K. Asakawa","doi":"10.1109/ICIPRM.2007.381235","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381235","url":null,"abstract":"A metal-mask (MM) method for selective-area-growth (SAG) of self-assembled InAs quantum dots (QDs) on a GaAs substrate was developed for applications of ultra-small and ultra-fast all optical devices based on a combination of QD and photonic crystal waveguides (PC-WGs). Successful SAG of QDs with high density and high optical quality comparable to conventional InAs-QDs grown without the MM was confirmed by atomic force microscopy and photoluminescence (PL) measurements. The QD density was 4times1010 cm-2 and FWHM of the PL emission was around 30 meV at room temperature. By insertion of a strain-reducing layer on the QD, the PL peak wavelength was controlled from 1240 nm to 1320 nm. The MM method is promising for realizing the PC-based all optical devices, which require SAG of QDs and a QD ensemble with a different absorption-peak wavelength in a different area.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"154 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133865862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single Photon Emission From an InGaAs Quantum Dot Precisely Positioned on a Nano-Plane 精确定位在纳米平面上的InGaAs量子点的单光子发射
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381250
T. Hsieh, J. Chyi, Hsiang-Szu Chang, Wen-Yen Chen, T. Hsu
{"title":"Single Photon Emission From an InGaAs Quantum Dot Precisely Positioned on a Nano-Plane","authors":"T. Hsieh, J. Chyi, Hsiang-Szu Chang, Wen-Yen Chen, T. Hsu","doi":"10.1109/ICIPRM.2007.381250","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381250","url":null,"abstract":"This work demonstrates single photon emissions from a site-controlled quantum dot (QD) grown on a self-constructed nano plane. The size of the nano plane on the micron-sized multi-facet structure is accurately controlled by a low surface reducing rate (~16 nm/min). Single QD spectral lines were resolved and identified. The anti-bunching behavior reveals that single photons are emitted from the positioned QD.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116005181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Deep Etched DBR Gratings in InP for Photonic Integrated Circuits 光子集成电路InP中深蚀刻DBR光栅
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381164
B. Docter, E. J. Geluk, M. Sander-Jochem, F. Karouta, M. Smit
{"title":"Deep Etched DBR Gratings in InP for Photonic Integrated Circuits","authors":"B. Docter, E. J. Geluk, M. Sander-Jochem, F. Karouta, M. Smit","doi":"10.1109/ICIPRM.2007.381164","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381164","url":null,"abstract":"A novel fabrication process was developed to realize high quality SiOx masks for CI2 based ICP etching of InP. First order DBR mirrors, 3 mum deep, were realized that can be used in photonic circuits. The process can be used in combination with conventional optical lithography, reducing production cost.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123140111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Strain Issues on Crystal Growth of Bulk InGaAs from GaAs Seed GaAs种子制备大块InGaAs晶体生长的应变问题
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381131
M.R. Islam, M.S. Rahman, P. Verma, M. Yamada
{"title":"Strain Issues on Crystal Growth of Bulk InGaAs from GaAs Seed","authors":"M.R. Islam, M.S. Rahman, P. Verma, M. Yamada","doi":"10.1109/ICIPRM.2007.381131","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381131","url":null,"abstract":"Strain issues in bulk InxGa1-xAs crystals grown from GaAs seed have been investigated using Raman scattering and energy dispersive X-ray experiments. It has been found that there exists a large amount of residual strain in bulk InxGa1-xAs crystals grown by the traveling liquidus zone (TLZ) and multi-component zone melting (MCZM) methods. Using axially symmetrical strain model, strain distributions have been evaluated for various possible compositional profiles including the profile currently used in the MCZM method. It has been found that the residual strain can be reduced remarkably by changing the profile presently being used in this growth method. It is expected that high-quality bulk In0.3Ga0.7As crystal can be obtained by the TLZ method using In0.3Ga0.7As seed-crystal which may be prepared by the MCZM method following the profile suggested in the present study.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124863617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InAs/InP Quantum Dash Based Electro Optic Modulator with Over 70 NM Bandwidth at 1.55 μM 基于InAs/InP量子Dash的电光调制器，带宽超过70 NM，波长为1.55 μM
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381176
G. Moreau, A. Martinez, K. Merghem, S. Guilet, S. Bouchoule, G. Patriarche, B. Rousseau, F. Lelarge, P. Voisin, A. Ramdane
{"title":"InAs/InP Quantum Dash Based Electro Optic Modulator with Over 70 NM Bandwidth at 1.55 μM","authors":"G. Moreau, A. Martinez, K. Merghem, S. Guilet, S. Bouchoule, G. Patriarche, B. Rousseau, F. Lelarge, P. Voisin, A. Ramdane","doi":"10.1109/ICIPRM.2007.381176","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381176","url":null,"abstract":"We demonstrate the potential of InAs/InP quantum dash-based phase modulator for broadband (≫70 nm) applications at 1.55 μm. In recent years, there have been great efforts in the development of self assembled quantum dot nanostructures. This material system is expected to offer unique optoelectronic properties owing to the carrier confinement in the three space dimensions. Much works have been devoted so far to the realization of QD based lasers with the demonstration of superior performances compared to those of quantum well based lasers. Indeed, very low threshold current densities, temperature insensitivity, sub-picosecond pulse generation in mode locked lasers have readily been demonstrated. All-optical signal processing has also been investigated using semiconductor optical amplifiers. However, less research has been made in the field of light modulation using QD-based devices. In this paper, we report for the first time a systematic investigation of the electro-optic effect using an waveguide structures including 6-and 10-InAs/InP QDash layers of bandgap at 1.44 μm. Modulation efficiencies based on Pockels effect are found equal to /sp tilde/ 10.5 7 °/ V.mm and stays constant over a bandwidth of ˜70 nm covering the 1530-1600 nm window.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125228495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Real Time Probing of Self-Assembling Process Steps in InAs/GaAs Quantum Dot Growth InAs/GaAs量子点生长中自组装过程的实时探测
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381184
T. Kudo, T. Inoue, T. Kita, O. Wada
{"title":"Real Time Probing of Self-Assembling Process Steps in InAs/GaAs Quantum Dot Growth","authors":"T. Kudo, T. Inoue, T. Kita, O. Wada","doi":"10.1109/ICIPRM.2007.381184","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381184","url":null,"abstract":"Self-assembling process of InAs/GaAs quantum dots (QDs) has been investigated by analyzing reflection high-energy electron diffraction (RHEED) images. During the island formation, the chevron diffraction of the RHEED shows dramatic changes depending on the As pressure. The self-assembling process has been found to consist of four steps. Initially islands are preferentially covered by high-index facets, which transform into low-index surfaces as the growth proceeds, and then the islands are covered by stable low-index facets. In this growth step, the island size becomes uniform, because of the self-limited growth. In the next step, we found indium flow back from the islands into the wetting layer, which causes shrinkage of the island size as well as formation of giant islands. This indium flow back can be controlled by As pressure.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116660547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent Advances of VCSEL Technologies VCSEL技术的最新进展
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381214
F. Koyama, T. Miyamoto
{"title":"Recent Advances of VCSEL Technologies","authors":"F. Koyama, T. Miyamoto","doi":"10.1109/ICIPRM.2007.381214","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381214","url":null,"abstract":"A vertical cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique features have been proven, such as low power consumption, wafer-level testing, small packaging capability and so on. The market of VCSELs has been growing up rapidly in recent years and they are now key devices in local area networks using multi-mode optical fibers. Also, long wavelength VCSELs are currently attracting much interest for use in single-mode fiber metropolitan area and wide area network applications. In addition, a VCSEL-based disruptive technology enables various consumer applications such as a laser mouse and laser printers. In this paper, the recent advance of VCSEL photonics will be reviewed, which include the wavelength integration/control of single-mode VCSELs. The athermal operation of micromachined VCSELs are demonstrated. Also, this paper explores the potential and challenges for new functions of VCSELs, including high-speed nonlinear phase-shifters, slow light modulators and so on.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114817164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Emission and absorption polarization in InGaAs multiple quantum dots layers of different spacer layer thickness 不同间隔层厚度InGaAs多量子点层的发射和吸收极化
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381154
K. Chuang, C.Y. Chen, T. Tzeng, D. Feng, T. Lay, T. Chang
{"title":"Emission and absorption polarization in InGaAs multiple quantum dots layers of different spacer layer thickness","authors":"K. Chuang, C.Y. Chen, T. Tzeng, D. Feng, T. Lay, T. Chang","doi":"10.1109/ICIPRM.2007.381154","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381154","url":null,"abstract":"Triple-layer InGaAs QDs of different spacer layer thickness are characterized by polarized electroluminescence and photocurrent spectroscopy. The results show that the decease of spacer layer thickness increases the TE/TM insensitivity.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121882508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel 含60%铟通道的80 nm t栅变质HEMTx的特性
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381135
H. Yoon, J. Shim, D. Kang, J. Hong, K. Lee
{"title":"Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel","authors":"H. Yoon, J. Shim, D. Kang, J. Hong, K. Lee","doi":"10.1109/ICIPRM.2007.381135","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381135","url":null,"abstract":"The 80 nm T-gate metamorphic high electron mobility transistors (MHEMTs) with 60% indium channel have been fabricated and the DC, microwave, and uniformity of the device were characterized. The MHEMT device showed the DC characteristics having an extrinsic transconductance of 1150 mS/mm and a gate breakdown voltage of -6.2 V. The fT and fmax obtained for the 80 nm times 100 mum MHEMT device are 235 GHz and 290 GHz, respectively. The MHEMT exhibited uniform threshold voltage of -0.47 V with a standard deviation of 0.045 V across the wafer.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124146763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InP-HEMT-TIA with Differential Optical Input Using Vertical High Topology Pin-Diodes 采用垂直高拓扑引脚二极管的差分光输入InP-HEMT-TIA
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381134
I. Nannen, A. Poloczek, A. Matiss, W. Brockerhoff, I. Regolin, F. Tegude
{"title":"InP-HEMT-TIA with Differential Optical Input Using Vertical High Topology Pin-Diodes","authors":"I. Nannen, A. Poloczek, A. Matiss, W. Brockerhoff, I. Regolin, F. Tegude","doi":"10.1109/ICIPRM.2007.381134","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381134","url":null,"abstract":"A monolithically integrated combination of high electron mobility transistors and high responsivity (1.0 A/W) vertical pin-diodes have been used in optical synchronous quadrature phase-shift keying transimpedance amplifier design for 40 Gbit/s transmission.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130646231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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