Deep Etched DBR Gratings in InP for Photonic Integrated Circuits

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381164

B. Docter, E. J. Geluk, M. Sander-Jochem, F. Karouta, M. Smit

引用次数: 25

Abstract

A novel fabrication process was developed to realize high quality SiOx masks for CI2 based ICP etching of InP. First order DBR mirrors, 3 mum deep, were realized that can be used in photonic circuits. The process can be used in combination with conventional optical lithography, reducing production cost.

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光子集成电路InP中深蚀刻DBR光栅

为了实现高质量的SiOx掩模，本文提出了一种新的制备工艺。实现了一阶DBR反射镜，深度为3微米，可用于光子电路。该工艺可与常规光学光刻结合使用，降低生产成本。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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