Characteristics of 80 nm T-Gate Metamorphic HEMTx with 60 % Indium Channel

Abstract

The 80 nm T-gate metamorphic high electron mobility transistors (MHEMTs) with 60% indium channel have been fabricated and the DC, microwave, and uniformity of the device were characterized. The MHEMT device showed the DC characteristics having an extrinsic transconductance of 1150 mS/mm and a gate breakdown voltage of -6.2 V. The fT and fmax obtained for the 80 nm times 100 mum MHEMT device are 235 GHz and 290 GHz, respectively. The MHEMT exhibited uniform threshold voltage of -0.47 V with a standard deviation of 0.045 V across the wafer.