InP-HEMT-TIA with Differential Optical Input Using Vertical High Topology Pin-Diodes

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381134

I. Nannen, A. Poloczek, A. Matiss, W. Brockerhoff, I. Regolin, F. Tegude

引用次数: 1

Abstract

A monolithically integrated combination of high electron mobility transistors and high responsivity (1.0 A/W) vertical pin-diodes have been used in optical synchronous quadrature phase-shift keying transimpedance amplifier design for 40 Gbit/s transmission.

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采用垂直高拓扑引脚二极管的差分光输入InP-HEMT-TIA

采用高电子迁移率晶体管和高响应度(1.0 A/W)垂直管脚二极管的单片集成组合，设计了传输速率为40 Gbit/s的光同步正交相移键控跨阻放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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