精确定位在纳米平面上的InGaAs量子点的单光子发射

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381250

T. Hsieh, J. Chyi, Hsiang-Szu Chang, Wen-Yen Chen, T. Hsu

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引用次数: 1

摘要

本研究展示了在自构建纳米平面上生长的位控量子点(QD)的单光子发射。采用低表面还原速率(~16 nm/min)精确控制微米级多面结构上纳米平面的尺寸。对单个QD谱线进行了分辨和识别。反聚束行为揭示了单光子从定位的量子点发射出来。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single Photon Emission From an InGaAs Quantum Dot Precisely Positioned on a Nano-Plane

This work demonstrates single photon emissions from a site-controlled quantum dot (QD) grown on a self-constructed nano plane. The size of the nano plane on the micron-sized multi-facet structure is accurately controlled by a low surface reducing rate (~16 nm/min). Single QD spectral lines were resolved and identified. The anti-bunching behavior reveals that single photons are emitted from the positioned QD.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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