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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials最新文献

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Fabrication of hot electron transistors controlled by insulated gate 用绝缘栅控制的热电子晶体管的制备
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381140
T. Hino, A. Suwa, T. Hasegawa, H. Saito, M. Oono, Y. Miyamoto, K. Furuya
{"title":"Fabrication of hot electron transistors controlled by insulated gate","authors":"T. Hino, A. Suwa, T. Hasegawa, H. Saito, M. Oono, Y. Miyamoto, K. Furuya","doi":"10.1109/ICIPRM.2007.381140","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381140","url":null,"abstract":"A hot electron transistor controlled using an insulated gate was fabricated, and collector current modulation by the gate bias was observed at room temperature. In the fabricated devices, a current density of 160 kA/cm2, clear modulation of the collector current, and the insulation properties of the gate were confirmed. The problems observed in our former hot electron transistors with Schottky gate electrodes, such as a low current density and a gate leakage current at room temperature, were solved.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131627131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Emitter layer design for high-speed InP HBTs with high reliability 高速高可靠性InP hbt发射极层设计
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381219
N. Kashio, K. Kurishima, Y. K. Fukai, S. Yamahata, Y. Miyamoto
{"title":"Emitter layer design for high-speed InP HBTs with high reliability","authors":"N. Kashio, K. Kurishima, Y. K. Fukai, S. Yamahata, Y. Miyamoto","doi":"10.1109/ICIPRM.2007.381219","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381219","url":null,"abstract":"We investigated the influence of emitter doping level on the performance for high-speed InP HBTs with high reliability. The HBTs show high current gain and excellent reliability characteristics under stress current density of 5 mA/mum2.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"19 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114127076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Impact of Interface Formation on Intersubband Transitions in MBE GaInAs:Si/AlAsSb Multiple Coupled DQWs 界面形成对MBE GaInAs:Si/AlAsSb多耦合dqw子带间跃迁的影响
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381237
K. Biermann, H. Kuenzel, C. Villas-Boas Tribuzy, S. Ohser, H. Schneider, M. Helm
{"title":"Impact of Interface Formation on Intersubband Transitions in MBE GaInAs:Si/AlAsSb Multiple Coupled DQWs","authors":"K. Biermann, H. Kuenzel, C. Villas-Boas Tribuzy, S. Ohser, H. Schneider, M. Helm","doi":"10.1109/ICIPRM.2007.381237","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381237","url":null,"abstract":"The impact of indium segregation and diffusion of antimony on intersubband transition (IST) wavelengths in AlAsSb/GalnAs multiple quantum well (MQW) and double quantum well (DQW) structures has been evaluated. By means of 8-band k-p calculations the effect of non-abrupt interfaces on IST wavelengths in such structures is elucidated. Comparison of measured and calculated absorption spectra reveals the sacrificial character of AlAs interfacial layers for diffused or segregated atoms and allows for estimating the limits of the intersubband approach as regards short wavelength relaxation transitions.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"281 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116072425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Control of Optical Emission from Coupled Excitonic States in Quantum Dot Superlattice Structures 量子点超晶格结构中耦合激子态光发射的控制
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381156
H. Nakatani, T. Kita, O. Kojima, O. Wada, K. Akahane, M. Tsuchiya
{"title":"Control of Optical Emission from Coupled Excitonic States in Quantum Dot Superlattice Structures","authors":"H. Nakatani, T. Kita, O. Kojima, O. Wada, K. Akahane, M. Tsuchiya","doi":"10.1109/ICIPRM.2007.381156","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381156","url":null,"abstract":"Multilayered self-assembled quantum dot (SAQD) structures are indispensable for increasing the SAQD density in practical device applications. The electronic and optical natures of these structures are affected by the spacer-layer thickness; the electronic states in SAQDs can couple vertically with decreasing the thickness. We have confirmed the control of optical emission from such coupled SAQDs, which form a SAQD-superlattice structure. The transverse-magnetic mode of photoluminescence (PL) from the coupled SAQD has been found to be enhanced. The detailed PL analyses have shown bimodal effective size distribution consisting of coupled and uncoupled SAQDs. Also, the relaxation time of the coupled SAQDs has been shown to be longer than that of the uncoupled SAQDs. The present coupled SAQD structure will provide a useful technique of controlling SAQD emission properties.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124331797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Double Pulse Generator by 2D Photonic Crystal Waveguide System 基于二维光子晶体波导系统的双脉冲发生器
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381233
N. Yamamoto, J. Sugisaka, H. Shimada, M. Okano, K. Komori
{"title":"A Double Pulse Generator by 2D Photonic Crystal Waveguide System","authors":"N. Yamamoto, J. Sugisaka, H. Shimada, M. Okano, K. Komori","doi":"10.1109/ICIPRM.2007.381233","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381233","url":null,"abstract":"We developed double pulse generators based on two-dimensional slab photonic crystal. The device structures are asymmetric Mach-Zehnder interferometer. In the device, there are two Y shape branches. By utilizing modified Y branches, the loop path in the interferometer is suppressed, and it is shown that the devices are worked as double pulse generators with picoseconds order delay time by measurement of transmission spectra.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120991233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Residual Stress and High Repeatability of SiNX Thin Films for InP-based Optoelectronic Device Fabrication by Dual Radio Frequency Plasma Enhanced Chemical Vapor Deposition 双射频等离子体增强化学气相沉积制备inp基光电器件的低残余应力和高重复性SiNX薄膜
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381166
Yu Song, B. Xiong, Changzheng Sun, Yi Luo
{"title":"Low Residual Stress and High Repeatability of SiNX Thin Films for InP-based Optoelectronic Device Fabrication by Dual Radio Frequency Plasma Enhanced Chemical Vapor Deposition","authors":"Yu Song, B. Xiong, Changzheng Sun, Yi Luo","doi":"10.1109/ICIPRM.2007.381166","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381166","url":null,"abstract":"Low residual stress and high repeatability of plasma enhanced chemical vapor deposited SiNx thin films were obtained by optimizing dual radio frequency power source and eliminating influence of dielectric films formerly deposited on chamber wall.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121423706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Role of Re-absorption Effect to Quality Factor in Quantum-Dot Photonic-Crystal Nanocavities 量子点光子晶体纳米腔中重吸收效应对品质因子的影响
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381234
T. Tawara, H. Kamada, Y. Zhang, T. Tanabe, N. Cade, H. Gotoh, D. Ding, S. Johnson, E. Kuramochi, M. Notomi, H. Nakano
{"title":"Role of Re-absorption Effect to Quality Factor in Quantum-Dot Photonic-Crystal Nanocavities","authors":"T. Tawara, H. Kamada, Y. Zhang, T. Tanabe, N. Cade, H. Gotoh, D. Ding, S. Johnson, E. Kuramochi, M. Notomi, H. Nakano","doi":"10.1109/ICIPRM.2007.381234","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381234","url":null,"abstract":"We have systematically evaluated quality (Q) factor in quantum-dot (QD) photonic-crystal nanocavities. The measured Q factor was very sensitive to the detuning energy of the cavity mode to QD inhomogeneous broadening due to the re-absorption effect of the uncoupled QDs within the nanocavity. We achieved a high Q factor of over 10,000 and an ultra-low threshold lasing by the detuning of the cavity mode and the suppression of this effect.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122892989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical Response of InP-based High-Electron Mobility Transistor and its Applications to High-Speed Photo-Detectors and Signal Converters 基于inp的高电子迁移率晶体管的光响应及其在高速光电探测器和信号转换器中的应用
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381128
H. Murata, N. Kobayashi, Y. Okamura, T. Kosugi, T. Enoki
{"title":"Optical Response of InP-based High-Electron Mobility Transistor and its Applications to High-Speed Photo-Detectors and Signal Converters","authors":"H. Murata, N. Kobayashi, Y. Okamura, T. Kosugi, T. Enoki","doi":"10.1109/ICIPRM.2007.381128","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381128","url":null,"abstract":"The increases of drain current, small signal gain, and gate capacitance in InP-based HEMTs were observed clearly by irradiating a 1550 nm focused laser beam onto their surface. They lead to high-speed photo-detectors and signal converters.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122296591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Sub-THz Resonant Tunneling Diode Oscillators With Offset-Fed Slot Antenna 带偏置馈电槽天线的亚太赫兹谐振隧道二极管振荡器
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381245
S. Suzuki, K. Hanashima, N. Kishimoto, M. Asada
{"title":"Sub-THz Resonant Tunneling Diode Oscillators With Offset-Fed Slot Antenna","authors":"S. Suzuki, K. Hanashima, N. Kishimoto, M. Asada","doi":"10.1109/ICIPRM.2007.381245","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381245","url":null,"abstract":"We obtained sub-THz oscillation from resonant tunneling diode (RTD) oscillators with offset-fed slot antennas. The oscillation frequency without offset is about 350 GHz, whereas it increases to about 420-440 GHz with offset of 15 mum (60%) from the antenna center. The dependence of the oscillation frequency and output power on RTD position along slot antenna is analyzed using 3-dimensional electromagnetic-field simulation. The oscillation frequency and output power largely increase compared with previously reported oscillators without offset feed, because of improvement on impedance matching between RTD and antenna. The experimental frequencies were in good agreement with the calculation.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1860 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134369931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT 基于sub - 50nm门长InP HEMT的高增益g波段MMIC放大器
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.380679
P. Liu, W. Yoshida, J. Lee, L. Dang, J. Wang, W. Liu, J. Uyeda, D. Li, X. Mei, W. Deal, M. Barsky, Y. Kim, M. Lange, T. Chin, V. Radisic, T. Gaier, A. Fung, R. Lai
{"title":"High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT","authors":"P. Liu, W. Yoshida, J. Lee, L. Dang, J. Wang, W. Liu, J. Uyeda, D. Li, X. Mei, W. Deal, M. Barsky, Y. Kim, M. Lange, T. Chin, V. Radisic, T. Gaier, A. Fung, R. Lai","doi":"10.1109/ICIPRM.2007.380679","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.380679","url":null,"abstract":"We have recently developed a sub-50nm gate length InP HEMT (high electron mobility transistor) process with a peak transconductance of 2000 mS/mm at 1V. A 3-stage single-ended common source 150-220 GHz MMIC LNA demonstrates greater than 20 dB gain at 200 GHz (> 7 dB gain per stage) and is >5 dB higher LNA gain compared to the same MMIC design fabricated on our baselined 70 nm gate length InP HEMT MMIC process. To our knowledge, this is the highest amplifier gain per stage achieved at this frequency range.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"16 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132609297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
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