Fabrication of hot electron transistors controlled by insulated gate

Abstract

A hot electron transistor controlled using an insulated gate was fabricated, and collector current modulation by the gate bias was observed at room temperature. In the fabricated devices, a current density of 160 kA/cm2, clear modulation of the collector current, and the insulation properties of the gate were confirmed. The problems observed in our former hot electron transistors with Schottky gate electrodes, such as a low current density and a gate leakage current at room temperature, were solved.