基于sub - 50nm门长InP HEMT的高增益g波段MMIC放大器

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.380679

P. Liu, W. Yoshida, J. Lee, L. Dang, J. Wang, W. Liu, J. Uyeda, D. Li, X. Mei, W. Deal, M. Barsky, Y. Kim, M. Lange, T. Chin, V. Radisic, T. Gaier, A. Fung, R. Lai

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引用次数: 11

摘要

我们最近开发了一种低于50nm栅极长度的InP HEMT(高电子迁移率晶体管)工艺，其在1V时的峰值跨导为2000 mS/mm。3级单端共源150-220 GHz MMIC LNA在200 GHz时的增益大于20 dB (> 7 dB /级增益)，并且与采用基准70 nm门长InP HEMT MMIC工艺制作的相同MMIC设计相比，LNA增益高出5 dB以上。据我们所知，这是在此频率范围内实现的最高放大器级增益。

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High Gain G-Band MMIC Amplifiers Based on Sub-50 nm Gate Length InP HEMT

We have recently developed a sub-50nm gate length InP HEMT (high electron mobility transistor) process with a peak transconductance of 2000 mS/mm at 1V. A 3-stage single-ended common source 150-220 GHz MMIC LNA demonstrates greater than 20 dB gain at 200 GHz (> 7 dB gain per stage) and is >5 dB higher LNA gain compared to the same MMIC design fabricated on our baselined 70 nm gate length InP HEMT MMIC process. To our knowledge, this is the highest amplifier gain per stage achieved at this frequency range.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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