高速高可靠性InP hbt发射极层设计

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381219

N. Kashio, K. Kurishima, Y. K. Fukai, S. Yamahata, Y. Miyamoto

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引用次数: 5

摘要

研究了发射极掺杂水平对高速高可靠性InP hbt性能的影响。在5 mA/mum2的应力电流密度下，HBTs具有较高的电流增益和良好的可靠性。

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Emitter layer design for high-speed InP HBTs with high reliability

We investigated the influence of emitter doping level on the performance for high-speed InP HBTs with high reliability. The HBTs show high current gain and excellent reliability characteristics under stress current density of 5 mA/mum2.

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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