界面形成对MBE GaInAs:Si/AlAsSb多耦合dqw子带间跃迁的影响

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381237

K. Biermann, H. Kuenzel, C. Villas-Boas Tribuzy, S. Ohser, H. Schneider, M. Helm

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引用次数: 1

摘要

研究了铟的偏析和锑的扩散对AlAsSb/GalnAs多量子阱(MQW)和双量子阱(DQW)结构中子带间跃迁(IST)波长的影响。通过8波段k-p计算，阐明了非突变界面对此类结构中IST波长的影响。测量和计算的吸收光谱的比较揭示了扩散或分离原子的AlAs界面层的牺牲特性，并允许估计子带间方法在短波长的弛豫跃迁方面的极限。

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Impact of Interface Formation on Intersubband Transitions in MBE GaInAs:Si/AlAsSb Multiple Coupled DQWs

The impact of indium segregation and diffusion of antimony on intersubband transition (IST) wavelengths in AlAsSb/GalnAs multiple quantum well (MQW) and double quantum well (DQW) structures has been evaluated. By means of 8-band k-p calculations the effect of non-abrupt interfaces on IST wavelengths in such structures is elucidated. Comparison of measured and calculated absorption spectra reveals the sacrificial character of AlAs interfacial layers for diffused or segregated atoms and allows for estimating the limits of the intersubband approach as regards short wavelength relaxation transitions.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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