双射频等离子体增强化学气相沉积制备inp基光电器件的低残余应力和高重复性SiNX薄膜

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381166

Yu Song, B. Xiong, Changzheng Sun, Yi Luo

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引用次数: 1

摘要

通过优化双射频电源，消除介质膜对腔壁的影响，获得了低残余应力和高重复性的等离子体增强化学气相沉积SiNx薄膜。

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Low Residual Stress and High Repeatability of SiNX Thin Films for InP-based Optoelectronic Device Fabrication by Dual Radio Frequency Plasma Enhanced Chemical Vapor Deposition

Low residual stress and high repeatability of plasma enhanced chemical vapor deposited SiNx thin films were obtained by optimizing dual radio frequency power source and eliminating influence of dielectric films formerly deposited on chamber wall.

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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