Optical Response of InP-based High-Electron Mobility Transistor and its Applications to High-Speed Photo-Detectors and Signal Converters

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381128

H. Murata, N. Kobayashi, Y. Okamura, T. Kosugi, T. Enoki

引用次数: 4

Abstract

The increases of drain current, small signal gain, and gate capacitance in InP-based HEMTs were observed clearly by irradiating a 1550 nm focused laser beam onto their surface. They lead to high-speed photo-detectors and signal converters.

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基于inp的高电子迁移率晶体管的光响应及其在高速光电探测器和信号转换器中的应用

通过1550 nm聚焦激光束照射inp基hemt表面，可以清楚地观察到漏极电流、小信号增益和栅极电容的增加。它们导致了高速光电探测器和信号转换器的出现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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