不同间隔层厚度InGaAs多量子点层的发射和吸收极化

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381154

K. Chuang, C.Y. Chen, T. Tzeng, D. Feng, T. Lay, T. Chang

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引用次数: 0

摘要

利用极化电致发光和光电流光谱对不同间隔层厚度的三层InGaAs量子点进行了表征。结果表明，间隔层厚度的减小增大了TE/TM的不敏感性。

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Emission and absorption polarization in InGaAs multiple quantum dots layers of different spacer layer thickness

Triple-layer InGaAs QDs of different spacer layer thickness are characterized by polarized electroluminescence and photocurrent spectroscopy. The results show that the decease of spacer layer thickness increases the TE/TM insensitivity.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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