用于毫米波和亚毫米波应用的35nm InP HEMT

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381122

X. Mei, W. Yoshida, W. Deal, P. Liu, J. Lee, J. Uyeda, L. Dang, J. Wang, W. Liu, M. Barsky, Y. Kim, M. Lange, T. Chin, V. Radisic, T. Gaier, A. Fung, R. Lai

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引用次数: 12

摘要

采用35nm栅极长度和改进的欧姆接触，开发了一种新的InP HEMT工艺。栅极长度减少，栅极源电容达到0.4pF/mm，比我们的基准70nm器件提高了30%。新设计的接触层结合了Au/Ge/Ni/Au合金欧姆金属，成功地将接触电阻降低到0.07。良好的器件特性已被证明具有高达2 S/mm的跨导和420GHz的截止频率。用这种新工艺制作了单级共源放大器。在265GHz时测量到5dB的峰值增益。在300GHz时达到3dB的MAG/MSG，使该器件适用于毫米波甚至亚毫米波频段的应用。

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35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications

A new InP HEMT process has been developed with 35nm gate length and improved Ohmic contact. A gate-source capacitance of 0.4pF/mm is achieved with the reduced gate length, a 30% improvement over our baseline 70nm device. The contact resistance is successfully reduced to 0.07 with the newly designed contact layer combined with an alloyed Au/Ge/Ni/Au Ohmic metal. Good device characteristics has been demonstrated with a transconductance as high as 2 S/mm and a cutoff frequency fr of 420GHz. A single-stage common-source amplifier was fabricated with this new process. A peak gain of 5dB is measured at 265GHz. A MAG/MSG of 3dB at 300GHz was achieved, making the device suitable for applications at frequencies well into the millimeter-wave and even sub-millimeter-wave band.

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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