R. Suemitsu, S. Ullah, Seunghun Lee, M. Otake, N. Nishiyama, S. Arai
{"title":"Integration of Front Power Monitor with Distributed Reflector Laser Through Deep Etched Narrow Groove Isolation","authors":"R. Suemitsu, S. Ullah, Seunghun Lee, M. Otake, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2007.381119","DOIUrl":null,"url":null,"abstract":"Monolithic integration of a distributed reflector (DR) laser with a front power monitor has been fabricated, where quantum wire-like active regions have been used as a photo detector for the first time. The electrical isolation between the laser and power monitor sections has been realized by deep (3.8 mum) and narrow (500 nm) groove etching while moderately high optical transmittivity of about 95% and a very high isolation resistance of 60 MOmega have been achieved. Almost linear photocurrent output has been observed with increasing the optical output power.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Monolithic integration of a distributed reflector (DR) laser with a front power monitor has been fabricated, where quantum wire-like active regions have been used as a photo detector for the first time. The electrical isolation between the laser and power monitor sections has been realized by deep (3.8 mum) and narrow (500 nm) groove etching while moderately high optical transmittivity of about 95% and a very high isolation resistance of 60 MOmega have been achieved. Almost linear photocurrent output has been observed with increasing the optical output power.