K. Kinoshita, T. Ueda, S. Adachi, T. Masaki, S. Yoda, M. Arai, T. Watanabe, M. Yuda, Y. Kondo
{"title":"Growth of Platy InGaAs Single Crystals and Fabrication of 1.3 μm Laser Diodes","authors":"K. Kinoshita, T. Ueda, S. Adachi, T. Masaki, S. Yoda, M. Arai, T. Watanabe, M. Yuda, Y. Kondo","doi":"10.1109/ICIPRM.2007.381192","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381192","url":null,"abstract":"High quality InxGa1-xAs platy single crystals (x: 0.1 -0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133116769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Se‐Heon Kim, Min‐Kyo Seo, Ju‐Young Kim, Yong-Hee Lee
{"title":"Effects of a Bottom Substrate on Emission Properties of a Photonic Crystal Nanolaser","authors":"Se‐Heon Kim, Min‐Kyo Seo, Ju‐Young Kim, Yong-Hee Lee","doi":"10.1109/ICIPRM.2007.381231","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381231","url":null,"abstract":"By choosing a one-wavelength air gap between a two-dimensional photonic crystal slab and a simple InP substrate, over 57% of total radiated power can be collected within a small divergence angle of plusmn30deg.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124484810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"DC and RF Characteristics of 60 nm T-gate MHEMTs with 53% Indium Channel","authors":"J. Shim, H. Yoon, D. Kang, J. Hong, K. Lee","doi":"10.1109/ICIPRM.2007.381221","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381221","url":null,"abstract":"In this paper T-gate metamorphic high electron mobility transistors with 60 nm gate length has been developed using T-gate lithography process. Electron beam lithography was used to define 60 nm gate using ZEP single layer on SiN layer, which is used to fabricate structurally stable T-gate HEMTs. The SiN layer was then etched over 130% of the layer thickness for enhancing yield using reactive ion etching, followed by second electron beam lithography process. DC and RF performances of 60 nm T-gate MHEMTs were characterized.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124687606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. L. Choi, S. Ray, Z. Zhang, D. Childs, K. Groom, B. Stevens, H. Liu, M. Hopkinson, R. Hogg
{"title":"Quantum Dot Superluminescent Diodes - Bandwidth Engineering and Epitaxy for High Powers","authors":"T. L. Choi, S. Ray, Z. Zhang, D. Childs, K. Groom, B. Stevens, H. Liu, M. Hopkinson, R. Hogg","doi":"10.1109/ICIPRM.2007.381180","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381180","url":null,"abstract":"We present experimental and theoretical work describing the engineering of broadband quantum dot superluminescent diodes for a wide range of applications. The key differences, advantages, and challenges of using quantum dots are discussed.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129602700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Meziani, M. Hanabe, A. Koizumi, T. Otsuji, E. Sano
{"title":"Self Oscillation of the Plasma Waves in a Dual Grating Gates HEMT Device","authors":"Y. Meziani, M. Hanabe, A. Koizumi, T. Otsuji, E. Sano","doi":"10.1109/ICIPRM.2007.381246","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381246","url":null,"abstract":"We report on the photoresponse and emission measurements of the dual grating gates HEMT. An emission of terahertz radiation at room temperature has been detected by a Silicon bolometer. The signal was attributed to the self oscillation of the plasma waves.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129080308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Feng, C. Chiu, J. Chen, C.M. Lai, T. Lay, T. Chang
{"title":"N-type Modulation-Doped InGaAlAs/InP Strain-Balanced Quantum-Well SOA/Laser Fabricated by a Multi-Step Wet-Etching Process","authors":"D. Feng, C. Chiu, J. Chen, C.M. Lai, T. Lay, T. Chang","doi":"10.1109/ICIPRM.2007.381160","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381160","url":null,"abstract":"We report the design and MBE growth of strain-balanced epitaxial structures on InP containing n-type modulation-doped InGaAlAs/InGaAs quantum wells and a new multi-step wet-etching process for laser fabrication.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130403062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, Y. Roelens, G. Dambrine, A. Cappy, S. Bollaert, J. Grahn
{"title":"DC and RF Performance of 0.2-0.4 /spl mu/m Gate Length InAs/AlSb HEMTs","authors":"M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, Y. Roelens, G. Dambrine, A. Cappy, S. Bollaert, J. Grahn","doi":"10.1109/ICIPRM.2007.381124","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381124","url":null,"abstract":"InAs/AlSb HEMTs with gate lengths in the range 225-335 nm processed on the same wafer have been investigated with respect to DC and RF performance. While the magnitude of the transconductance gm was similar for all gate lengths, the shortest gate length HEMT exhibited the highest extrinsic maximum frequency of oscillation fmax and extrinsic current gain cut-off frequency fT of 115 GHz and 165 GHz, respectively.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127649400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
O. Parillaud, M. Garrigues, J. Leclercq, R. Gil-Sobraques, M. Crochon, Jean-Michel Roger, O. Amore, B. Vilotich
{"title":"Tunable Near Infra Red InP / InGaAs QWs Based Photodetector Integrated in a MOEMS Structure for the Realisation of a Micro-Spectrometer","authors":"O. Parillaud, M. Garrigues, J. Leclercq, R. Gil-Sobraques, M. Crochon, Jean-Michel Roger, O. Amore, B. Vilotich","doi":"10.1109/ICIPRM.2007.381167","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381167","url":null,"abstract":"This paper deals with the design and realisation of a Near Infra-Red (NIR) micro-spectrometer (1.5 to 2 mum) for non invasive detection. The device is based on an InGaAs strained QWs photodiode integrated in a MOEMS structure for wavelength tunability. We address two main challenges which are the realisation of a long wavelength photodetector combined with the fabrication of a micro-machined tunable air-gap cavity resonator. We present first the design and process critical issues related to the residual strain management in the structure. The InGaAs QW growth aspects are presented. We also describe an example of a system for the monitoring of the sugar concentration in water which has been chosen to validate the concept.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"62 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123117618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Critical Thickness of Nano-scale Lattice Mismatched Heterostructures","authors":"P. Lu, S.M. Wang","doi":"10.1109/ICIPRM.2007.381222","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381222","url":null,"abstract":"Nano-epitaxy has attracted great attention in the last several years. Theoretical study can date back to more than twenty years ago when Luryi and Suhir (LS) studied critical thickness of a strained epi layer grown on a ridged strip (Luryi, 1986). They used an analytic expression for strain and predicted that the critical thickness increased to infinity when the strip width was small enough (in the nm range). Following the same approach, Zubia and Hersee (ZH) considered a strained layer grown on a compliant patterned substrate and got the same conclusion (Zubia, 1999). In both studies, a critical thickness is defined when the strain energy exceeds the dislocation energy. However, numerous experiments reveal that the lattice mismatch can not be completely accommodated by misfit dislocations and the residual strain does not go to zero at the critical thickness. In addition, Van Mieghem et al. investigated strain and stress in a parallelepiped strained layer using finite element method (FEM) and found that the analytic formula for strain was deficient (Van Mieghem, 1994). In this work, we investigate strain distribution and critical thickness of a strained layer grown on a nano-scale patterned compliant substrate using FEM. We take into account the residual strain distribution and show that the predicted critical thickness is much larger than those predicted values using the LS model.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"59 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120926315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"35-nm-Gate In0.7Ga0.3As/In0.52Al0.48As HEMT with 520-GHz fT","authors":"I. Watanabe, A. Endoh, T. Mimura, T. Matsui","doi":"10.1109/ICIPRM.2007.380681","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.380681","url":null,"abstract":"We fabricated a 35-nm-gate In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistor by using a simple, self-aligned one-step-recessed gate procedure. An extrinsic maximum transconductance (gm_max) of 1.7 S/mm and a current gain cutoff frequency (fT) of 520 GHz were achieved at room temperature. This significantly high fT was obtained by reducing the gate length to 35 nm and using an epitaxial structure with a 3-nm-thick InAlAs spacer layer, a 6-nm-thick InAlAs Schottky barrier layer and a 2-nm-thick InP etching stopper layer to decrease the gate-to-channel distance to 8 nm, and form simultaneously 50-nm-long side-recess structures and T-shaped gates stacked on the InAlAs Schottky barrier layer. These results are the first experimental achievement of fT as high as 520 GHz by using the one-step-recessed gate procedure.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"297 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127560770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}