2007 IEEE 19th International Conference on Indium Phosphide & Related Materials最新文献

筛选
英文 中文
Growth of Platy InGaAs Single Crystals and Fabrication of 1.3 μm Laser Diodes 片状InGaAs单晶生长及1.3 μm激光二极管的制备
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381192
K. Kinoshita, T. Ueda, S. Adachi, T. Masaki, S. Yoda, M. Arai, T. Watanabe, M. Yuda, Y. Kondo
{"title":"Growth of Platy InGaAs Single Crystals and Fabrication of 1.3 μm Laser Diodes","authors":"K. Kinoshita, T. Ueda, S. Adachi, T. Masaki, S. Yoda, M. Arai, T. Watanabe, M. Yuda, Y. Kondo","doi":"10.1109/ICIPRM.2007.381192","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381192","url":null,"abstract":"High quality InxGa1-xAs platy single crystals (x: 0.1 -0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133116769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of a Bottom Substrate on Emission Properties of a Photonic Crystal Nanolaser 底部衬底对光子晶体纳米激光器发射特性的影响
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381231
Se‐Heon Kim, Min‐Kyo Seo, Ju‐Young Kim, Yong-Hee Lee
{"title":"Effects of a Bottom Substrate on Emission Properties of a Photonic Crystal Nanolaser","authors":"Se‐Heon Kim, Min‐Kyo Seo, Ju‐Young Kim, Yong-Hee Lee","doi":"10.1109/ICIPRM.2007.381231","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381231","url":null,"abstract":"By choosing a one-wavelength air gap between a two-dimensional photonic crystal slab and a simple InP substrate, over 57% of total radiated power can be collected within a small divergence angle of plusmn30deg.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124484810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
DC and RF Characteristics of 60 nm T-gate MHEMTs with 53% Indium Channel 含53%铟沟道的60 nm t栅mhemt直流和射频特性
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381221
J. Shim, H. Yoon, D. Kang, J. Hong, K. Lee
{"title":"DC and RF Characteristics of 60 nm T-gate MHEMTs with 53% Indium Channel","authors":"J. Shim, H. Yoon, D. Kang, J. Hong, K. Lee","doi":"10.1109/ICIPRM.2007.381221","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381221","url":null,"abstract":"In this paper T-gate metamorphic high electron mobility transistors with 60 nm gate length has been developed using T-gate lithography process. Electron beam lithography was used to define 60 nm gate using ZEP single layer on SiN layer, which is used to fabricate structurally stable T-gate HEMTs. The SiN layer was then etched over 130% of the layer thickness for enhancing yield using reactive ion etching, followed by second electron beam lithography process. DC and RF performances of 60 nm T-gate MHEMTs were characterized.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124687606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Quantum Dot Superluminescent Diodes - Bandwidth Engineering and Epitaxy for High Powers 量子点超发光二极管-高功率的带宽工程和外延
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381180
T. L. Choi, S. Ray, Z. Zhang, D. Childs, K. Groom, B. Stevens, H. Liu, M. Hopkinson, R. Hogg
{"title":"Quantum Dot Superluminescent Diodes - Bandwidth Engineering and Epitaxy for High Powers","authors":"T. L. Choi, S. Ray, Z. Zhang, D. Childs, K. Groom, B. Stevens, H. Liu, M. Hopkinson, R. Hogg","doi":"10.1109/ICIPRM.2007.381180","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381180","url":null,"abstract":"We present experimental and theoretical work describing the engineering of broadband quantum dot superluminescent diodes for a wide range of applications. The key differences, advantages, and challenges of using quantum dots are discussed.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129602700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Self Oscillation of the Plasma Waves in a Dual Grating Gates HEMT Device 双光栅门HEMT器件中等离子体波的自振荡
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381246
Y. Meziani, M. Hanabe, A. Koizumi, T. Otsuji, E. Sano
{"title":"Self Oscillation of the Plasma Waves in a Dual Grating Gates HEMT Device","authors":"Y. Meziani, M. Hanabe, A. Koizumi, T. Otsuji, E. Sano","doi":"10.1109/ICIPRM.2007.381246","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381246","url":null,"abstract":"We report on the photoresponse and emission measurements of the dual grating gates HEMT. An emission of terahertz radiation at room temperature has been detected by a Silicon bolometer. The signal was attributed to the self oscillation of the plasma waves.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129080308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
N-type Modulation-Doped InGaAlAs/InP Strain-Balanced Quantum-Well SOA/Laser Fabricated by a Multi-Step Wet-Etching Process 多步湿蚀刻工艺制备n型调制掺杂InGaAlAs/InP应变平衡量子阱SOA/激光器
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381160
D. Feng, C. Chiu, J. Chen, C.M. Lai, T. Lay, T. Chang
{"title":"N-type Modulation-Doped InGaAlAs/InP Strain-Balanced Quantum-Well SOA/Laser Fabricated by a Multi-Step Wet-Etching Process","authors":"D. Feng, C. Chiu, J. Chen, C.M. Lai, T. Lay, T. Chang","doi":"10.1109/ICIPRM.2007.381160","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381160","url":null,"abstract":"We report the design and MBE growth of strain-balanced epitaxial structures on InP containing n-type modulation-doped InGaAlAs/InGaAs quantum wells and a new multi-step wet-etching process for laser fabrication.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130403062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DC and RF Performance of 0.2-0.4 /spl mu/m Gate Length InAs/AlSb HEMTs 栅极长度为0.2-0.4 μ l /m的InAs/AlSb hemt的直流和射频性能
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381124
M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, Y. Roelens, G. Dambrine, A. Cappy, S. Bollaert, J. Grahn
{"title":"DC and RF Performance of 0.2-0.4 /spl mu/m Gate Length InAs/AlSb HEMTs","authors":"M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, Y. Roelens, G. Dambrine, A. Cappy, S. Bollaert, J. Grahn","doi":"10.1109/ICIPRM.2007.381124","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381124","url":null,"abstract":"InAs/AlSb HEMTs with gate lengths in the range 225-335 nm processed on the same wafer have been investigated with respect to DC and RF performance. While the magnitude of the transconductance gm was similar for all gate lengths, the shortest gate length HEMT exhibited the highest extrinsic maximum frequency of oscillation fmax and extrinsic current gain cut-off frequency fT of 115 GHz and 165 GHz, respectively.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127649400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Tunable Near Infra Red InP / InGaAs QWs Based Photodetector Integrated in a MOEMS Structure for the Realisation of a Micro-Spectrometer 基于可调谐近红外InP / InGaAs量子阱的光电探测器集成在MOEMS结构中,用于实现微型光谱仪
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381167
O. Parillaud, M. Garrigues, J. Leclercq, R. Gil-Sobraques, M. Crochon, Jean-Michel Roger, O. Amore, B. Vilotich
{"title":"Tunable Near Infra Red InP / InGaAs QWs Based Photodetector Integrated in a MOEMS Structure for the Realisation of a Micro-Spectrometer","authors":"O. Parillaud, M. Garrigues, J. Leclercq, R. Gil-Sobraques, M. Crochon, Jean-Michel Roger, O. Amore, B. Vilotich","doi":"10.1109/ICIPRM.2007.381167","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381167","url":null,"abstract":"This paper deals with the design and realisation of a Near Infra-Red (NIR) micro-spectrometer (1.5 to 2 mum) for non invasive detection. The device is based on an InGaAs strained QWs photodiode integrated in a MOEMS structure for wavelength tunability. We address two main challenges which are the realisation of a long wavelength photodetector combined with the fabrication of a micro-machined tunable air-gap cavity resonator. We present first the design and process critical issues related to the residual strain management in the structure. The InGaAs QW growth aspects are presented. We also describe an example of a system for the monitoring of the sugar concentration in water which has been chosen to validate the concept.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"62 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123117618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Critical Thickness of Nano-scale Lattice Mismatched Heterostructures 纳米晶格错配异质结构的临界厚度
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381222
P. Lu, S.M. Wang
{"title":"Critical Thickness of Nano-scale Lattice Mismatched Heterostructures","authors":"P. Lu, S.M. Wang","doi":"10.1109/ICIPRM.2007.381222","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381222","url":null,"abstract":"Nano-epitaxy has attracted great attention in the last several years. Theoretical study can date back to more than twenty years ago when Luryi and Suhir (LS) studied critical thickness of a strained epi layer grown on a ridged strip (Luryi, 1986). They used an analytic expression for strain and predicted that the critical thickness increased to infinity when the strip width was small enough (in the nm range). Following the same approach, Zubia and Hersee (ZH) considered a strained layer grown on a compliant patterned substrate and got the same conclusion (Zubia, 1999). In both studies, a critical thickness is defined when the strain energy exceeds the dislocation energy. However, numerous experiments reveal that the lattice mismatch can not be completely accommodated by misfit dislocations and the residual strain does not go to zero at the critical thickness. In addition, Van Mieghem et al. investigated strain and stress in a parallelepiped strained layer using finite element method (FEM) and found that the analytic formula for strain was deficient (Van Mieghem, 1994). In this work, we investigate strain distribution and critical thickness of a strained layer grown on a nano-scale patterned compliant substrate using FEM. We take into account the residual strain distribution and show that the predicted critical thickness is much larger than those predicted values using the LS model.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"59 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120926315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
35-nm-Gate In0.7Ga0.3As/In0.52Al0.48As HEMT with 520-GHz fT 35nm栅极In0.7Ga0.3As/In0.52Al0.48As HEMT
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.380681
I. Watanabe, A. Endoh, T. Mimura, T. Matsui
{"title":"35-nm-Gate In0.7Ga0.3As/In0.52Al0.48As HEMT with 520-GHz fT","authors":"I. Watanabe, A. Endoh, T. Mimura, T. Matsui","doi":"10.1109/ICIPRM.2007.380681","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.380681","url":null,"abstract":"We fabricated a 35-nm-gate In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistor by using a simple, self-aligned one-step-recessed gate procedure. An extrinsic maximum transconductance (gm_max) of 1.7 S/mm and a current gain cutoff frequency (fT) of 520 GHz were achieved at room temperature. This significantly high fT was obtained by reducing the gate length to 35 nm and using an epitaxial structure with a 3-nm-thick InAlAs spacer layer, a 6-nm-thick InAlAs Schottky barrier layer and a 2-nm-thick InP etching stopper layer to decrease the gate-to-channel distance to 8 nm, and form simultaneously 50-nm-long side-recess structures and T-shaped gates stacked on the InAlAs Schottky barrier layer. These results are the first experimental achievement of fT as high as 520 GHz by using the one-step-recessed gate procedure.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"297 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127560770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信