DC and RF Characteristics of 60 nm T-gate MHEMTs with 53% Indium Channel

Abstract

In this paper T-gate metamorphic high electron mobility transistors with 60 nm gate length has been developed using T-gate lithography process. Electron beam lithography was used to define 60 nm gate using ZEP single layer on SiN layer, which is used to fabricate structurally stable T-gate HEMTs. The SiN layer was then etched over 130% of the layer thickness for enhancing yield using reactive ion etching, followed by second electron beam lithography process. DC and RF performances of 60 nm T-gate MHEMTs were characterized.