N-type Modulation-Doped InGaAlAs/InP Strain-Balanced Quantum-Well SOA/Laser Fabricated by a Multi-Step Wet-Etching Process

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381160

D. Feng, C. Chiu, J. Chen, C.M. Lai, T. Lay, T. Chang

引用次数: 0

Abstract

We report the design and MBE growth of strain-balanced epitaxial structures on InP containing n-type modulation-doped InGaAlAs/InGaAs quantum wells and a new multi-step wet-etching process for laser fabrication.

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多步湿蚀刻工艺制备n型调制掺杂InGaAlAs/InP应变平衡量子阱SOA/激光器

本文报道了含n型调制掺杂InGaAlAs/InGaAs量子阱的应变平衡外延结构的设计和MBE生长，以及一种新的用于激光制造的多步湿蚀刻工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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