Tunable Near Infra Red InP / InGaAs QWs Based Photodetector Integrated in a MOEMS Structure for the Realisation of a Micro-Spectrometer

O. Parillaud, M. Garrigues, J. Leclercq, R. Gil-Sobraques, M. Crochon, Jean-Michel Roger, O. Amore, B. Vilotich
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引用次数: 2

Abstract

This paper deals with the design and realisation of a Near Infra-Red (NIR) micro-spectrometer (1.5 to 2 mum) for non invasive detection. The device is based on an InGaAs strained QWs photodiode integrated in a MOEMS structure for wavelength tunability. We address two main challenges which are the realisation of a long wavelength photodetector combined with the fabrication of a micro-machined tunable air-gap cavity resonator. We present first the design and process critical issues related to the residual strain management in the structure. The InGaAs QW growth aspects are presented. We also describe an example of a system for the monitoring of the sugar concentration in water which has been chosen to validate the concept.
基于可调谐近红外InP / InGaAs量子阱的光电探测器集成在MOEMS结构中,用于实现微型光谱仪
本文介绍了一种用于无创检测的近红外(NIR)微型光谱仪(1.5 ~ 2 μ m)的设计与实现。该器件基于InGaAs应变QWs光电二极管,集成在具有波长可调性的MOEMS结构中。我们解决了两个主要挑战,即实现长波长的光电探测器与制造微机械可调谐气隙腔谐振器相结合。我们首先提出了与结构中残余应变管理相关的设计和工艺关键问题。介绍了InGaAs的QW增长方面。我们还描述了一个用于监测水中糖浓度的系统的例子,该系统已被选择来验证这一概念。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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