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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials最新文献

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Current Transport Mechanism in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors InP/InAlAs/GaAsSb/InP双异质结双极晶体管的电流输运机制
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381145
Hong Wang, C. Ng, K. Radhakrishnan, G. Ng
{"title":"Current Transport Mechanism in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors","authors":"Hong Wang, C. Ng, K. Radhakrishnan, G. Ng","doi":"10.1109/ICIPRM.2007.381145","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381145","url":null,"abstract":"In this work, the dc performance of InP/InAlAs/GaAsSb/InP DHBTs were characterized in the temperature range of 300 K to 420 K. The device transport mechanisms in DHBTs with a type-I E-B junction and a type-II B-C junction were studied. The experimental results indicate that electron injection at E-B junction could be affected by conduction barrier limited carrier transport. The conduction band offset of ~0.1 eV at InAlAs/GaAsSb heterojunction was estimated.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132288020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
N2-Based ICP-RIE Etching for InP-Based Photonic Crystal Membranes inp基光子晶体膜的n2基ICP-RIE刻蚀
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381163
K. Lee, S. Guilet, I. Sagnes, A. Talneau
{"title":"N2-Based ICP-RIE Etching for InP-Based Photonic Crystal Membranes","authors":"K. Lee, S. Guilet, I. Sagnes, A. Talneau","doi":"10.1109/ICIPRM.2007.381163","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381163","url":null,"abstract":"Adding N2 into Cl2-based plasma discharges during the etching of InP-based photonic crystal in ICP-RIE system is shown to produce smooth sidewalls through the passivation of the etched surfaces. Here we present that the addition of BCI3 into this discharge allows to produce smooth and also vertical profiles in InP-based PhC structures. Positive ion current densities have been measured to characterize the plasma, and provide a perspective to understand the etching mechanism. An one missing row (Wl) photonic crystal membrane-waveguide fabricated by CI2/N2/BCI3 gas mixture exhibits a low propagation losses value of 35 dB/cm while operating below the light line.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"442 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134575342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Extremely High gm> 2.2 S/mm and fT> 550 GHz in 30-nm Enhancement-Mode InP-HEMTs with Pt/Mo/Ti/Pt/Au Buried Gate 具有Pt/Mo/Ti/Pt/Au埋栅的30 nm增强模式InP-HEMTs具有极高的gm> 2.2 S/mm和fT> 550 GHz
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.380678
K. Shinohara, W. Ha, M. Rodwell, B. Brar
{"title":"Extremely High gm> 2.2 S/mm and fT> 550 GHz in 30-nm Enhancement-Mode InP-HEMTs with Pt/Mo/Ti/Pt/Au Buried Gate","authors":"K. Shinohara, W. Ha, M. Rodwell, B. Brar","doi":"10.1109/ICIPRM.2007.380678","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.380678","url":null,"abstract":"We have successfully developed 30-nm enhancement-mode (E-mode) InGaAs/InAlAs high electron mobility transistors (HEMTs) with an extremely high transconductance (gm ) of 2.22 S/mm, a current gain cutoff frequency (fT) of 554 GHz, and a maximum oscillation frequency (fmax ) of 358 GHz. The excellent high-speed performance was obtained by using a Pt/Mo/ Ti/Pt/Au buried gate technology, which enabled E-mode operation for very short 30-nm HEMTs while maintaining a low access resistance as well as a low gate leakage current. The effectively short gate-to-channel distance suppressed the short channel effect, resulting in a very high gm independent of the gate length (Lg ) and a greatly reduced output conductance (gd).","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133731750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
MBE Growth of Thick InGaAsN Layers Lattice-Matched to InP Substrates 与InP衬底晶格匹配的InGaAsN厚层MBE生长
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381202
K. Miura, Y. Nagai, Y. Iguchi, M. Tsubokura, H. Okada, Y. Kawamura
{"title":"MBE Growth of Thick InGaAsN Layers Lattice-Matched to InP Substrates","authors":"K. Miura, Y. Nagai, Y. Iguchi, M. Tsubokura, H. Okada, Y. Kawamura","doi":"10.1109/ICIPRM.2007.381202","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381202","url":null,"abstract":"We investigated the effects of growth temperature and As/III flux ratio on thick InGaAsN layers lattice-matched to InP substrates. We found that surface morphology and crystalline quality can be improved by growing at temperature higher than 480degC. By optimizing the As/III flux ratio, we successfully obtained the InGaAsN layer with PL wavelength as long as 2.03 mum at room temperature.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132314515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wide Bandgap Wavelength Control of InAs/InP Quantum Dots Array Waveguides by Selective MOVPE 选择性MOVPE控制InAs/InP量子点阵列波导的宽带隙波长
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381150
M. Akaishi, Y. Yamauchi, T. Okawa, Y. Saito, J. Yoshida, K. Shimomura
{"title":"Wide Bandgap Wavelength Control of InAs/InP Quantum Dots Array Waveguides by Selective MOVPE","authors":"M. Akaishi, Y. Yamauchi, T. Okawa, Y. Saito, J. Yoshida, K. Shimomura","doi":"10.1109/ICIPRM.2007.381150","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381150","url":null,"abstract":"We have obtained the 140 nm wavelength emission range from the self-assembled InAs QDs array waveguides on the InP substrate by employing the selective MOVPE growth using asymmetrical mask and the double-cap procedure of QDs.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122822389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent Progress in Devices and Circuit Technologies for Millimeter-Wave Applications 毫米波应用器件与电路技术的最新进展
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381243
E. Sano, K. Inafune
{"title":"Recent Progress in Devices and Circuit Technologies for Millimeter-Wave Applications","authors":"E. Sano, K. Inafune","doi":"10.1109/ICIPRM.2007.381243","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381243","url":null,"abstract":"Millimeter-waves are crucial for achieving future ubiquitous communication networks and imaging systems to ensure security. After reviewing recent progress in devices and circuit technologies in millimeter-wave monolithically integrated circuits (MMIC), this paper describes our recent research on fundamental technologies for intelligent RF circuits to be used in millimeter-wave wireless applications. We introduce metamaterials, which achieve unique electromagnetic properties not existing in nature, into InP-based MMICs. Basic circuit technologies for active integrated antennas and composite right-/left-handed metamaterials are discussed. Preliminary results for these circuits are presented.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120970680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Developments in Spintonic Materials 自旋材料的发展
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381236
C. Palmstrøm
{"title":"Developments in Spintonic Materials","authors":"C. Palmstrøm","doi":"10.1109/ICIPRM.2007.381236","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381236","url":null,"abstract":"","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114947613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fundamental Properties of Intentionally Neutralized Argon Fast ATM Beam Etching for III-V Semiconductors III-V型半导体中有意中和氩快速ATM光束刻蚀的基本特性
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381138
M. Suhara, M. Naoi, N. Matsuzaka, E. Matsuura, T. Okumura
{"title":"Fundamental Properties of Intentionally Neutralized Argon Fast ATM Beam Etching for III-V Semiconductors","authors":"M. Suhara, M. Naoi, N. Matsuzaka, E. Matsuura, T. Okumura","doi":"10.1109/ICIPRM.2007.381138","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381138","url":null,"abstract":"Fast atom (neutral) beam etching technique have already been developed and studied especially for fabrication processes in silicon based electron devices, however, electronic property of FAB etching for III-V materials have not been well clarified so far. In this paper, effects of surface damage due to FAB etching on current-voltage (I-V) characteristics of Schottky diodes were examined by introducing intentionally neutralized beam bombardment on n-GaAs surface, and moreover relation between neutralization properties and FAB etching properties for n-InGaAs were investigated, focusing on argon.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124449789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fundamental-Mode Operation of GaInAsP/InP Membrane DFB Lasers Bonded on SOI Substrate and its Waveguide Integration SOI基板上GaInAsP/InP膜DFB激光器基模工作及其波导集成
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381116
T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto, S. Tamura, S. Arai
{"title":"Fundamental-Mode Operation of GaInAsP/InP Membrane DFB Lasers Bonded on SOI Substrate and its Waveguide Integration","authors":"T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto, S. Tamura, S. Arai","doi":"10.1109/ICIPRM.2007.381116","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381116","url":null,"abstract":"A room-temperature continuous-wave operation under optical pumping was demonstrated with GalnAsP/InP membrane DFB lasers prepared on an SOI substrate integrated with a rib-waveguide structure. A threshold pump power of 11.3 mW and a sub-mode suppression ratio of 29 dB were obtained with a cavity length of 140 mum and a stripe width of 1.5 mum. Light output was obtained through the SOI waveguide of 500 mum-length.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128448728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of InAlGaAs/InAlAs/InP multi-mode interference photonic switch with Mach-Zehnder interferometer for higher switching performances 利用Mach-Zehnder干涉仪分析InAlGaAs/InAlAs/InP多模干涉光子开关，提高开关性能
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381174
Y. Ueda, T. Ishikawa, K. Utaka
{"title":"Analysis of InAlGaAs/InAlAs/InP multi-mode interference photonic switch with Mach-Zehnder interferometer for higher switching performances","authors":"Y. Ueda, T. Ishikawa, K. Utaka","doi":"10.1109/ICIPRM.2007.381174","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381174","url":null,"abstract":"We analyzed the switching performances of an InAlGaAs/InAlAs/InP multi-mode interference photonic switch with Mach-Zehnder interferometer. In the result, it is shown that the device can achieve high performances concerning lower crosstalk, lower power consumption and less polarization dependence.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"455 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129526090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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