{"title":"具有Pt/Mo/Ti/Pt/Au埋栅的30 nm增强模式InP-HEMTs具有极高的gm> 2.2 S/mm和fT> 550 GHz","authors":"K. Shinohara, W. Ha, M. Rodwell, B. Brar","doi":"10.1109/ICIPRM.2007.380678","DOIUrl":null,"url":null,"abstract":"We have successfully developed 30-nm enhancement-mode (E-mode) InGaAs/InAlAs high electron mobility transistors (HEMTs) with an extremely high transconductance (gm ) of 2.22 S/mm, a current gain cutoff frequency (fT) of 554 GHz, and a maximum oscillation frequency (fmax ) of 358 GHz. The excellent high-speed performance was obtained by using a Pt/Mo/ Ti/Pt/Au buried gate technology, which enabled E-mode operation for very short 30-nm HEMTs while maintaining a low access resistance as well as a low gate leakage current. The effectively short gate-to-channel distance suppressed the short channel effect, resulting in a very high gm independent of the gate length (Lg ) and a greatly reduced output conductance (gd).","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Extremely High gm> 2.2 S/mm and fT> 550 GHz in 30-nm Enhancement-Mode InP-HEMTs with Pt/Mo/Ti/Pt/Au Buried Gate\",\"authors\":\"K. Shinohara, W. Ha, M. Rodwell, B. Brar\",\"doi\":\"10.1109/ICIPRM.2007.380678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have successfully developed 30-nm enhancement-mode (E-mode) InGaAs/InAlAs high electron mobility transistors (HEMTs) with an extremely high transconductance (gm ) of 2.22 S/mm, a current gain cutoff frequency (fT) of 554 GHz, and a maximum oscillation frequency (fmax ) of 358 GHz. The excellent high-speed performance was obtained by using a Pt/Mo/ Ti/Pt/Au buried gate technology, which enabled E-mode operation for very short 30-nm HEMTs while maintaining a low access resistance as well as a low gate leakage current. The effectively short gate-to-channel distance suppressed the short channel effect, resulting in a very high gm independent of the gate length (Lg ) and a greatly reduced output conductance (gd).\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.380678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.380678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Extremely High gm> 2.2 S/mm and fT> 550 GHz in 30-nm Enhancement-Mode InP-HEMTs with Pt/Mo/Ti/Pt/Au Buried Gate
We have successfully developed 30-nm enhancement-mode (E-mode) InGaAs/InAlAs high electron mobility transistors (HEMTs) with an extremely high transconductance (gm ) of 2.22 S/mm, a current gain cutoff frequency (fT) of 554 GHz, and a maximum oscillation frequency (fmax ) of 358 GHz. The excellent high-speed performance was obtained by using a Pt/Mo/ Ti/Pt/Au buried gate technology, which enabled E-mode operation for very short 30-nm HEMTs while maintaining a low access resistance as well as a low gate leakage current. The effectively short gate-to-channel distance suppressed the short channel effect, resulting in a very high gm independent of the gate length (Lg ) and a greatly reduced output conductance (gd).