具有Pt/Mo/Ti/Pt/Au埋栅的30 nm增强模式InP-HEMTs具有极高的gm> 2.2 S/mm和fT> 550 GHz

K. Shinohara, W. Ha, M. Rodwell, B. Brar
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引用次数: 18

摘要

我们成功开发了30纳米增强模式(E-mode) InGaAs/InAlAs高电子迁移率晶体管(hemt),其超高跨导(gm)为2.22 S/mm,电流增益截止频率(fT)为554 GHz,最大振荡频率(fmax)为358 GHz。采用Pt/Mo/ Ti/Pt/Au埋地栅极技术获得了优异的高速性能,该技术可以在极短的30 nm hemt中实现e模式工作,同时保持低接入电阻和低栅极泄漏电流。有效的短栅极到通道距离抑制了短通道效应,导致非常高的gm独立于栅极长度(Lg)和大大降低的输出电导(gd)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Extremely High gm> 2.2 S/mm and fT> 550 GHz in 30-nm Enhancement-Mode InP-HEMTs with Pt/Mo/Ti/Pt/Au Buried Gate
We have successfully developed 30-nm enhancement-mode (E-mode) InGaAs/InAlAs high electron mobility transistors (HEMTs) with an extremely high transconductance (gm ) of 2.22 S/mm, a current gain cutoff frequency (fT) of 554 GHz, and a maximum oscillation frequency (fmax ) of 358 GHz. The excellent high-speed performance was obtained by using a Pt/Mo/ Ti/Pt/Au buried gate technology, which enabled E-mode operation for very short 30-nm HEMTs while maintaining a low access resistance as well as a low gate leakage current. The effectively short gate-to-channel distance suppressed the short channel effect, resulting in a very high gm independent of the gate length (Lg ) and a greatly reduced output conductance (gd).
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