M. Suhara, M. Naoi, N. Matsuzaka, E. Matsuura, T. Okumura
{"title":"Fundamental Properties of Intentionally Neutralized Argon Fast ATM Beam Etching for III-V Semiconductors","authors":"M. Suhara, M. Naoi, N. Matsuzaka, E. Matsuura, T. Okumura","doi":"10.1109/ICIPRM.2007.381138","DOIUrl":null,"url":null,"abstract":"Fast atom (neutral) beam etching technique have already been developed and studied especially for fabrication processes in silicon based electron devices, however, electronic property of FAB etching for III-V materials have not been well clarified so far. In this paper, effects of surface damage due to FAB etching on current-voltage (I-V) characteristics of Schottky diodes were examined by introducing intentionally neutralized beam bombardment on n-GaAs surface, and moreover relation between neutralization properties and FAB etching properties for n-InGaAs were investigated, focusing on argon.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Fast atom (neutral) beam etching technique have already been developed and studied especially for fabrication processes in silicon based electron devices, however, electronic property of FAB etching for III-V materials have not been well clarified so far. In this paper, effects of surface damage due to FAB etching on current-voltage (I-V) characteristics of Schottky diodes were examined by introducing intentionally neutralized beam bombardment on n-GaAs surface, and moreover relation between neutralization properties and FAB etching properties for n-InGaAs were investigated, focusing on argon.