MBE Growth of Thick InGaAsN Layers Lattice-Matched to InP Substrates

K. Miura, Y. Nagai, Y. Iguchi, M. Tsubokura, H. Okada, Y. Kawamura
{"title":"MBE Growth of Thick InGaAsN Layers Lattice-Matched to InP Substrates","authors":"K. Miura, Y. Nagai, Y. Iguchi, M. Tsubokura, H. Okada, Y. Kawamura","doi":"10.1109/ICIPRM.2007.381202","DOIUrl":null,"url":null,"abstract":"We investigated the effects of growth temperature and As/III flux ratio on thick InGaAsN layers lattice-matched to InP substrates. We found that surface morphology and crystalline quality can be improved by growing at temperature higher than 480degC. By optimizing the As/III flux ratio, we successfully obtained the InGaAsN layer with PL wavelength as long as 2.03 mum at room temperature.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

We investigated the effects of growth temperature and As/III flux ratio on thick InGaAsN layers lattice-matched to InP substrates. We found that surface morphology and crystalline quality can be improved by growing at temperature higher than 480degC. By optimizing the As/III flux ratio, we successfully obtained the InGaAsN layer with PL wavelength as long as 2.03 mum at room temperature.
与InP衬底晶格匹配的InGaAsN厚层MBE生长
我们研究了生长温度和As/III通量比对与InP衬底晶格匹配的InGaAsN层厚度的影响。我们发现在高于480℃的温度下生长可以改善表面形貌和晶体质量。通过优化As/III通量比,我们在室温下成功获得了PL波长长达2.03 mum的InGaAsN层。
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