{"title":"InP/InAlAs/GaAsSb/InP双异质结双极晶体管的电流输运机制","authors":"Hong Wang, C. Ng, K. Radhakrishnan, G. Ng","doi":"10.1109/ICIPRM.2007.381145","DOIUrl":null,"url":null,"abstract":"In this work, the dc performance of InP/InAlAs/GaAsSb/InP DHBTs were characterized in the temperature range of 300 K to 420 K. The device transport mechanisms in DHBTs with a type-I E-B junction and a type-II B-C junction were studied. The experimental results indicate that electron injection at E-B junction could be affected by conduction barrier limited carrier transport. The conduction band offset of ~0.1 eV at InAlAs/GaAsSb heterojunction was estimated.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Current Transport Mechanism in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors\",\"authors\":\"Hong Wang, C. Ng, K. Radhakrishnan, G. Ng\",\"doi\":\"10.1109/ICIPRM.2007.381145\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the dc performance of InP/InAlAs/GaAsSb/InP DHBTs were characterized in the temperature range of 300 K to 420 K. The device transport mechanisms in DHBTs with a type-I E-B junction and a type-II B-C junction were studied. The experimental results indicate that electron injection at E-B junction could be affected by conduction barrier limited carrier transport. The conduction band offset of ~0.1 eV at InAlAs/GaAsSb heterojunction was estimated.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381145\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Current Transport Mechanism in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors
In this work, the dc performance of InP/InAlAs/GaAsSb/InP DHBTs were characterized in the temperature range of 300 K to 420 K. The device transport mechanisms in DHBTs with a type-I E-B junction and a type-II B-C junction were studied. The experimental results indicate that electron injection at E-B junction could be affected by conduction barrier limited carrier transport. The conduction band offset of ~0.1 eV at InAlAs/GaAsSb heterojunction was estimated.