{"title":"Current Transport Mechanism in InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors","authors":"Hong Wang, C. Ng, K. Radhakrishnan, G. Ng","doi":"10.1109/ICIPRM.2007.381145","DOIUrl":null,"url":null,"abstract":"In this work, the dc performance of InP/InAlAs/GaAsSb/InP DHBTs were characterized in the temperature range of 300 K to 420 K. The device transport mechanisms in DHBTs with a type-I E-B junction and a type-II B-C junction were studied. The experimental results indicate that electron injection at E-B junction could be affected by conduction barrier limited carrier transport. The conduction band offset of ~0.1 eV at InAlAs/GaAsSb heterojunction was estimated.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, the dc performance of InP/InAlAs/GaAsSb/InP DHBTs were characterized in the temperature range of 300 K to 420 K. The device transport mechanisms in DHBTs with a type-I E-B junction and a type-II B-C junction were studied. The experimental results indicate that electron injection at E-B junction could be affected by conduction barrier limited carrier transport. The conduction band offset of ~0.1 eV at InAlAs/GaAsSb heterojunction was estimated.