M. Akaishi, Y. Yamauchi, T. Okawa, Y. Saito, J. Yoshida, K. Shimomura
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Wide Bandgap Wavelength Control of InAs/InP Quantum Dots Array Waveguides by Selective MOVPE
We have obtained the 140 nm wavelength emission range from the self-assembled InAs QDs array waveguides on the InP substrate by employing the selective MOVPE growth using asymmetrical mask and the double-cap procedure of QDs.