选择性MOVPE控制InAs/InP量子点阵列波导的宽带隙波长

M. Akaishi, Y. Yamauchi, T. Okawa, Y. Saito, J. Yoshida, K. Shimomura
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引用次数: 0

摘要

采用非对称掩膜法和双帽法对量子点进行选择性MOVPE生长,得到了在InP衬底上自组装的InAs量子点阵列波导的140 nm波长发射范围。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wide Bandgap Wavelength Control of InAs/InP Quantum Dots Array Waveguides by Selective MOVPE
We have obtained the 140 nm wavelength emission range from the self-assembled InAs QDs array waveguides on the InP substrate by employing the selective MOVPE growth using asymmetrical mask and the double-cap procedure of QDs.
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