K. Miura, Y. Nagai, Y. Iguchi, M. Tsubokura, H. Okada, Y. Kawamura
{"title":"与InP衬底晶格匹配的InGaAsN厚层MBE生长","authors":"K. Miura, Y. Nagai, Y. Iguchi, M. Tsubokura, H. Okada, Y. Kawamura","doi":"10.1109/ICIPRM.2007.381202","DOIUrl":null,"url":null,"abstract":"We investigated the effects of growth temperature and As/III flux ratio on thick InGaAsN layers lattice-matched to InP substrates. We found that surface morphology and crystalline quality can be improved by growing at temperature higher than 480degC. By optimizing the As/III flux ratio, we successfully obtained the InGaAsN layer with PL wavelength as long as 2.03 mum at room temperature.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"MBE Growth of Thick InGaAsN Layers Lattice-Matched to InP Substrates\",\"authors\":\"K. Miura, Y. Nagai, Y. Iguchi, M. Tsubokura, H. Okada, Y. Kawamura\",\"doi\":\"10.1109/ICIPRM.2007.381202\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigated the effects of growth temperature and As/III flux ratio on thick InGaAsN layers lattice-matched to InP substrates. We found that surface morphology and crystalline quality can be improved by growing at temperature higher than 480degC. By optimizing the As/III flux ratio, we successfully obtained the InGaAsN layer with PL wavelength as long as 2.03 mum at room temperature.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381202\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MBE Growth of Thick InGaAsN Layers Lattice-Matched to InP Substrates
We investigated the effects of growth temperature and As/III flux ratio on thick InGaAsN layers lattice-matched to InP substrates. We found that surface morphology and crystalline quality can be improved by growing at temperature higher than 480degC. By optimizing the As/III flux ratio, we successfully obtained the InGaAsN layer with PL wavelength as long as 2.03 mum at room temperature.