{"title":"inp基光子晶体膜的n2基ICP-RIE刻蚀","authors":"K. Lee, S. Guilet, I. Sagnes, A. Talneau","doi":"10.1109/ICIPRM.2007.381163","DOIUrl":null,"url":null,"abstract":"Adding N2 into Cl2-based plasma discharges during the etching of InP-based photonic crystal in ICP-RIE system is shown to produce smooth sidewalls through the passivation of the etched surfaces. Here we present that the addition of BCI3 into this discharge allows to produce smooth and also vertical profiles in InP-based PhC structures. Positive ion current densities have been measured to characterize the plasma, and provide a perspective to understand the etching mechanism. An one missing row (Wl) photonic crystal membrane-waveguide fabricated by CI2/N2/BCI3 gas mixture exhibits a low propagation losses value of 35 dB/cm while operating below the light line.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"442 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"N2-Based ICP-RIE Etching for InP-Based Photonic Crystal Membranes\",\"authors\":\"K. Lee, S. Guilet, I. Sagnes, A. Talneau\",\"doi\":\"10.1109/ICIPRM.2007.381163\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Adding N2 into Cl2-based plasma discharges during the etching of InP-based photonic crystal in ICP-RIE system is shown to produce smooth sidewalls through the passivation of the etched surfaces. Here we present that the addition of BCI3 into this discharge allows to produce smooth and also vertical profiles in InP-based PhC structures. Positive ion current densities have been measured to characterize the plasma, and provide a perspective to understand the etching mechanism. An one missing row (Wl) photonic crystal membrane-waveguide fabricated by CI2/N2/BCI3 gas mixture exhibits a low propagation losses value of 35 dB/cm while operating below the light line.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"442 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381163\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381163","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
N2-Based ICP-RIE Etching for InP-Based Photonic Crystal Membranes
Adding N2 into Cl2-based plasma discharges during the etching of InP-based photonic crystal in ICP-RIE system is shown to produce smooth sidewalls through the passivation of the etched surfaces. Here we present that the addition of BCI3 into this discharge allows to produce smooth and also vertical profiles in InP-based PhC structures. Positive ion current densities have been measured to characterize the plasma, and provide a perspective to understand the etching mechanism. An one missing row (Wl) photonic crystal membrane-waveguide fabricated by CI2/N2/BCI3 gas mixture exhibits a low propagation losses value of 35 dB/cm while operating below the light line.