N2-Based ICP-RIE Etching for InP-Based Photonic Crystal Membranes

K. Lee, S. Guilet, I. Sagnes, A. Talneau
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引用次数: 3

Abstract

Adding N2 into Cl2-based plasma discharges during the etching of InP-based photonic crystal in ICP-RIE system is shown to produce smooth sidewalls through the passivation of the etched surfaces. Here we present that the addition of BCI3 into this discharge allows to produce smooth and also vertical profiles in InP-based PhC structures. Positive ion current densities have been measured to characterize the plasma, and provide a perspective to understand the etching mechanism. An one missing row (Wl) photonic crystal membrane-waveguide fabricated by CI2/N2/BCI3 gas mixture exhibits a low propagation losses value of 35 dB/cm while operating below the light line.
inp基光子晶体膜的n2基ICP-RIE刻蚀
在ICP-RIE体系中刻蚀inp基光子晶体时,在cl2基等离子体放电中加入N2可以通过蚀刻表面的钝化产生光滑的侧壁。在这里,我们提出在这种放电中加入BCI3可以在基于inp的PhC结构中产生光滑和垂直的轮廓。测量了正离子电流密度来表征等离子体,并为理解刻蚀机制提供了一个视角。由CI2/N2/BCI3混合气体制备的一缺失行(Wl)光子晶体膜波导在光线以下工作时,传输损耗值低至35 dB/cm。
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