G. Zhang, K. Tateno, H. Sanada, T. Sogawa, H. Nakano
{"title":"AlAs/GaAs/GaP Heterostructure Nanowires Grown on Si Substrate","authors":"G. Zhang, K. Tateno, H. Sanada, T. Sogawa, H. Nakano","doi":"10.1109/ICIPRM.2007.381205","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381205","url":null,"abstract":"The growth of GaP and AlAs/GaAs/GaP heterostructure nanowires on Si using Au colloids as catalysts was investigated. For GaP nanowire growth, we found an epitaxial relationship between the GaP nanowires and Si substrate. The AlAs/GaAs/GaP heterostructure nanowires were found to grow vertically on Si. Structural analysis indicates that the hetero-interfaces are within several atomic layers in thickness and that the GaAs and AlAs segments have very few dislocations.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125009941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Nomoto, T. Taniguchi, S. Sasaki, J. Kasai, T. Ohtoshi, M. Aoki
{"title":"703-nm InGaAsP Quantum-Well Ridge-Waveguide Lasers","authors":"E. Nomoto, T. Taniguchi, S. Sasaki, J. Kasai, T. Ohtoshi, M. Aoki","doi":"10.1109/ICIPRM.2007.381215","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381215","url":null,"abstract":"An InGaAsP/AlGalnP quantum-well (QW) laser emitting at 703 nm on a GaAs substrate was demonstrated. Although quaternary InGaAsP is reported to have an immiscible region, compressively strained, thin InGaAsP was successfully grown on a GaAs substrate as an active layer. The ridge-waveguide structure of the laser has a 2-mum stripe and achieves extremely low operating current at a 40-mW CW from 20 to 80degC with a characteristic temperature of 151 K. These InGaAsP QW lasers have been operating for over 640 hours during a 40-mW-constant-power CW life test at 40degC. This laser diode is suitable as a light source for spectroscopic measurement due to its single longitudinal mode and stable fundamental lateral transverse mode.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126243550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Nonparabolic Valence Subband in In0.53Ga0.47As/In0.52Al0.48As Multi-Quantum Wells Using Transmission Spectroscopy","authors":"K. Tanaka, N. Kotera","doi":"10.1109/ICIPRM.2007.381130","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381130","url":null,"abstract":"Transimisson spectroscopy in lattice matched In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells (MQWs) structures were measured at some low temperatures. Steplike structures accentuated by the exciton peaks of interband transitions were observed in on transmission spectra. Energy of the three light hole transition was lower than one expected with calculation. The lower energy of the three light hole transition might suggest nonparabolicity of the light hole.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122712985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Kraemer, F. Lenk, A. Maaßdorf, H. Wuerfl, G. Traenkle
{"title":"High Yield Transferred Substrate InP DHBT","authors":"T. Kraemer, F. Lenk, A. Maaßdorf, H. Wuerfl, G. Traenkle","doi":"10.1109/ICIPRM.2007.381210","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381210","url":null,"abstract":"A transferred substrate InP DHBT of 0.8 mum emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of f<sub>t</sub> = 300 GHz plusmn 3%<sub>SD</sub>, f<sub>max</sub> = 250 GHz plusmn 5%<sub>SD</sub> at a breakdown voltage of BV<sub>ceo</sub> = 6 V.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"22 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120822503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz","authors":"M. Feng, W. Snodgrass","doi":"10.1109/ICIPRM.2007.381208","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381208","url":null,"abstract":"InP HBTs have been considered over GaAs HBTs as one of the most promising technology to realize ultra wideband applications due to its wide bandwidth, lower 1/f noise, and high current driving capability, good linearity and good uniformity of threshold voltage distribution for mixed signal circuit applications. Since the report of SiGe HBT with Ft> 350 GHz by IBM in 2002, InP HBT has achieved record performance with Ft > 380 GHz in 2003.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"2020 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122973584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Lefebvre, M. Borg, M. Malmkvist, J. Grahn, L. Desplanque, X. Wallart, Y. Roelens, G. Dambrine, A. Cappy, S. Bollaert
{"title":"(Cl2:Ar) ICP/RIE Dry Etching of Al(Ga) Sb FOR AlSb/InAs HEMTs","authors":"E. Lefebvre, M. Borg, M. Malmkvist, J. Grahn, L. Desplanque, X. Wallart, Y. Roelens, G. Dambrine, A. Cappy, S. Bollaert","doi":"10.1109/ICIPRM.2007.381139","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381139","url":null,"abstract":"Dry etching of AlSb and Al<sub>0.80</sub>Ga<sub>0.20</sub>Sb has been performed by inductively coupled plasma/reactive ion etching based on a (Cl<sub>2</sub>:Ar) gas mixture without addition of BCI<sub>3</sub>. The dry etch process has been used to fabricate AlSb/InAs high electron mobility transistors isolated by a shallow mesa. Good DC/RF results, with extrinsic f<sub>T</sub>/f<sub>max</sub>= 135/105 GHz, have been measured for a 2times50 mum HEMT with a gate length of 295 nm.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"208 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127679296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Rodwell, E. Lind, Z. Griffith, S. Bank, A. M. Crook, U. Singisetti, M. Wistey, G. Burek, A. Gossard
{"title":"Frequency Limits of InP-based Integrated Circuits","authors":"M. Rodwell, E. Lind, Z. Griffith, S. Bank, A. M. Crook, U. Singisetti, M. Wistey, G. Burek, A. Gossard","doi":"10.1109/ICIPRM.2007.380676","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.380676","url":null,"abstract":"We examine the limits in scaling of InP-based bipolar and field effect transistors for increased device bandwidth. With InP-based HBTs, emitter and base contact resistivities and IC thermal resistance are the major limits to increased device bandwidth; devices with 1-1.5 THz simultaneous ftau and fmax are feasible. Major challenges faced in developing either InGaAs HEMTs having THz cutoff frequencies or InGaAs-channel MOSFETs having drive current consistent with the 22 nm ITRS objectives include the low two-dimensional effective density of states and the high bound state energies in narrow quantum wells.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"541 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127730287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Photo-Illuminated InP Terahertz IMPATT Device","authors":"Nilratan Mazumder","doi":"10.1109/ICIPRM.2007.381142","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381142","url":null,"abstract":"The dynamic properties of indium phosphide (InP) double drift IMPATT diode operating at 0.3 THz region are studied through a simulation experiment. The study indicates that InP IMPATT is capable of generating high RF power (41.7 mW) at 0.3 terahertz with 10% efficiency. However, the parasitic series resistance is found to produce a 3.0% reduction in the negative conductance and the RF power of the diode. The effect of photo-illumination on the device is also investigated by studying the role of enhanced saturation current on the THz frequency performance of this IMPATT device. A modified double iterative simulation technique developed by the authors is used for this purpose. It is found that (i) the negative conductance and (ii) the negative resistance of the device decrease, while, the frequency of operation and the device quality factor shift upward with increasing saturation current. The upward shift in operating frequency is found to be more (30 GHz) when the device performance is controlled by the hole saturation current rather than by the electron dominated saturation current. The magnitudes of electron and hole ionization rates in the semiconductor have been found to be correlated with the above effect. These results thus indicate that InP DDR IMPATT diode is highly photo-sensitive even at THz range of frequencies.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127947703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. L. Goh, J. Ng, C. Tan, J. David, R. Sidhu, A. Holmes, J. Campbell
{"title":"InP-Based Avalanche Photodiodes with ≫ 2.1μm Detection Capability","authors":"Y. L. Goh, J. Ng, C. Tan, J. David, R. Sidhu, A. Holmes, J. Campbell","doi":"10.1109/ICIPRM.2007.381181","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381181","url":null,"abstract":"Type-II superlattice formed by In<sub>0.53</sub>Ga<sub>0.47</sub>As/GaAs<sub>0.51</sub>Sb<sub>0.49</sub> wafers have been grown on InP substrates. The superlattice is studied in several aspects to explore its potential in achieving ≫2.1μm detection InP-based avalanche photodiodes. The ionisation coefficients of the superlattice In<sub>0.53</sub> Ga<sub>0.47</sub>As(5nm) /GaAs<sub>0.47</sub>Sb<sub>0.49</sub> (5nm) are found to be similar to those of In<sub>0.53</sub> Ga<sub>0.47</sub> As. Hence the more compatible avalanche material is InAlAs for low excess noise performance. In addition photoluminescence data indicated that the detection wavelength of these superlattice can be longer by modifying the superlattice combination, while maintaining lattice-matched to InP.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116715105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Nagase, T. Simoyama, T. Mozume, T. Hasama, H. Ishikawa
{"title":"Intersubband transitions in InGaAs/AlAsSb coupled double quantum wells with InAlAs coupling barriers","authors":"M. Nagase, T. Simoyama, T. Mozume, T. Hasama, H. Ishikawa","doi":"10.1109/ICIPRM.2007.381238","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381238","url":null,"abstract":"We have fabricated a novel InGaAs/AlAsSb coupled double quantum well (C-DQW) with InAlAs coupling barrier for use in all-optical switches based on intersubband transitions (ISBTs). Strong well -well coupling produced by the low potential of the InAlAs coupling barrier shortens the ISB-T wavelength. The FTIR measurements show that the wavelength of ISB absorption decreases to 1.53 mum when the InGaAs wells and InAlAs coupling barrier in the C-DQW consist of 9 and 4 monolayers (MLs), respectively. Moreover, the absorption coefficients at 1.55 mum increase significantly above 500 cm-1 and are therefore equivalent to those of the conventional C-DQW that consists of AlAsSb and AlAs coupling barriers. It is confirmed that the ISB-T wavelength can be reduced effectively by reducing the potential height of the coupling barriers as well as the thicknesses of the wells and coupling barriers.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115810854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}