具有2.1μm探测能力的inp基雪崩光电二极管

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381181

Y. L. Goh, J. Ng, C. Tan, J. David, R. Sidhu, A. Holmes, J. Campbell

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引用次数: 3

摘要

在InP衬底上生长出了由In0.53Ga0.47As/GaAs0.51Sb0.49晶圆形成的ii型超晶格。对该超晶格进行了多方面的研究，以探索其在实现2.1μm探测inp基雪崩光电二极管方面的潜力。发现超晶格In0.53 Ga0.47As(5nm) /GaAs0.47Sb0.49 (5nm)的电离系数与In0.53 Ga0.47As相似。因此，更兼容的雪崩材料是低过量噪声性能的InAlAs。此外，光致发光数据表明，在保持晶格与InP匹配的情况下，修改超晶格组合可以延长这些超晶格的探测波长。

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InP-Based Avalanche Photodiodes with ≫ 2.1μm Detection Capability

Type-II superlattice formed by In_0.53Ga_0.47As/GaAs_0.51Sb_0.49 wafers have been grown on InP substrates. The superlattice is studied in several aspects to explore its potential in achieving ≫2.1μm detection InP-based avalanche photodiodes. The ionisation coefficients of the superlattice In_0.53 Ga_0.47As(5nm) /GaAs_0.47Sb_0.49 (5nm) are found to be similar to those of In_0.53 Ga_0.47 As. Hence the more compatible avalanche material is InAlAs for low excess noise performance. In addition photoluminescence data indicated that the detection wavelength of these superlattice can be longer by modifying the superlattice combination, while maintaining lattice-matched to InP.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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