High Yield Transferred Substrate InP DHBT

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381210

T. Kraemer, F. Lenk, A. Maaßdorf, H. Wuerfl, G. Traenkle

引用次数: 6

Abstract

A transferred substrate InP DHBT of 0.8 mum emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of f_t = 300 GHz plusmn 3%_SD, f_max = 250 GHz plusmn 5%_SD at a breakdown voltage of BV_ceo = 6 V.

查看原文本刊更多论文

高收率转移基板在p - DHBT

研制了一种发射极宽度为0.8 μ m的转移衬底InP DHBT。这些晶体管在3英寸晶圆上具有高良率和均匀的器件特性，在击穿电压BVceo = 6 V时，平均ft = 300 GHz + usmn 3%SD, fmax = 250 GHz + usmn 5%SD。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

自引率

0.00%

发文量