InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz

Abstract

InP HBTs have been considered over GaAs HBTs as one of the most promising technology to realize ultra wideband applications due to its wide bandwidth, lower 1/f noise, and high current driving capability, good linearity and good uniformity of threshold voltage distribution for mixed signal circuit applications. Since the report of SiGe HBT with Ft> 350 GHz by IBM in 2002, InP HBT has achieved record performance with Ft > 380 GHz in 2003.