Ft > 750GHz的InP伪异质结双极晶体管(PHBT

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381208

M. Feng, W. Snodgrass

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引用次数: 18

摘要

在混合信号电路应用中，InP hbt具有带宽宽、1/f噪声低、电流驱动能力强、线性度好、阈值电压分布均匀性好等优点，被认为是实现超宽带应用最有前途的技术之一。自2002年IBM报告Ft> 350 GHz的SiGe HBT以来，2003年InP HBT在Ft> 380 GHz的情况下取得了创纪录的性能。

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InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz

InP HBTs have been considered over GaAs HBTs as one of the most promising technology to realize ultra wideband applications due to its wide bandwidth, lower 1/f noise, and high current driving capability, good linearity and good uniformity of threshold voltage distribution for mixed signal circuit applications. Since the report of SiGe HBT with Ft> 350 GHz by IBM in 2002, InP HBT has achieved record performance with Ft > 380 GHz in 2003.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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