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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials最新文献

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Mysterious Material InN in Nitride Semiconductors - What's the Bandgap Energy and its Application? 氮化半导体中的神秘材料InN -什么是带隙能及其应用?
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381201
T. Matsuoka, M. Nakao
{"title":"Mysterious Material InN in Nitride Semiconductors - What's the Bandgap Energy and its Application?","authors":"T. Matsuoka, M. Nakao","doi":"10.1109/ICIPRM.2007.381201","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381201","url":null,"abstract":"The progress in nitride semiconductors is reviewed. The current status in the growth and characteristics of InN, which remains the most mysterious compound, is reviewed. The phase diagram for InN growth, the optical absorption characteristic, polarity, temperature dependence of photoluminescence, future prospects are described. The application of InN for light emitting devices is discussed.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"221 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116173716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Beyond CMOS: Logic Suitability of InGaAs HEMTs 超越CMOS: InGaAs hemt的逻辑适用性
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381120
J. A. D. Alamo, Dae-Hyun Kim
{"title":"Beyond CMOS: Logic Suitability of InGaAs HEMTs","authors":"J. A. D. Alamo, Dae-Hyun Kim","doi":"10.1109/ICIPRM.2007.381120","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381120","url":null,"abstract":"For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the \"microelectronics revolution\" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular, InGaAs with high InAs compositions are very promising. This paper reviews the merits and challenges of III-V's for logic applications. It also summarizes recent work of the authors in investigating the logic suitability of InGaAs HEMTs.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114929227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fT 300 nm以下的InGaAs/InP型i型dhbt具有150 nm集热器，30 nm基片，显示755 GHz fmax和416 GHz fT
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381209
Z. Griffith, E. Lind, M. Rodwell, X. Fang, D. Loubychev, Ying Wu, J. Fastenau, A. Liu
{"title":"Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fT","authors":"Z. Griffith, E. Lind, M. Rodwell, X. Fang, D. Loubychev, Ying Wu, J. Fastenau, A. Liu","doi":"10.1109/ICIPRM.2007.381209","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381209","url":null,"abstract":"We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) fabricated using a simple mesa structure. The devices employ a 30 nm highly doped InGaAs base and a 150 nm InP collector containing an InGaAs/InAlAs superlattice grade. These devices exhibit a maximum f<sub>max</sub> = 755 GHz with a 416 GHz /f<sub>T</sub>. This is the highest f<sub>max</sub> reported for a mesa HBT. Through the use of i-line lithography, the emitter junctions have been scaled from 500-600 nm down to 250-300 nm -all while maintaining similar collector to emitter area ratios. Because of the subsequent reduction to the base spreading resistance underneath the emitter R<sub>b,spread</sub> and increased radial heat flow from the narrower junction, significant increases to f<sub>max</sub> and reductions in device thermal resistance θ<sub>JA</sub> are expected and observed. The HBT current gain β ≈ 24-35, BV<sub>ceo</sub> = 4.60 V, BV<sub>cbo</sub> = 5.34 V, and the devices operate up to 20 mW / μm<sup>2</sup> before self-heating is observed to affect the DC characteristics.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"2009 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127325246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 51
Optical Gain of INGAASP MQW with Different Photonic Crystal Waveguides 不同光子晶体波导下INGAASP MQW的光增益
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381158
K. Cui, Yidong Huang, Xiaoyu Mao, Wei Zhang, J. Peng
{"title":"Optical Gain of INGAASP MQW with Different Photonic Crystal Waveguides","authors":"K. Cui, Yidong Huang, Xiaoyu Mao, Wei Zhang, J. Peng","doi":"10.1109/ICIPRM.2007.381158","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381158","url":null,"abstract":"Optical gain spectra of InGaAsP MQW with different PCWG were simulated by considering the variation of group velocity and the natural broadening synthetically. An optimal width of the PCWG was demonstrated for maximum gain enhancement theoretically.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123736468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quinary TlGaInNAs DQW Structures: Effect of Growth Temperature and Growth Rate on Tl Incorporation TlGaInNAs DQW结构:生长温度和生长速率对Tl掺入的影响
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381190
D. Krishnamurthy, A. Fujiwara, S. Hasegawa, H. Asahi
{"title":"Quinary TlGaInNAs DQW Structures: Effect of Growth Temperature and Growth Rate on Tl Incorporation","authors":"D. Krishnamurthy, A. Fujiwara, S. Hasegawa, H. Asahi","doi":"10.1109/ICIPRM.2007.381190","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381190","url":null,"abstract":"TIGalnNAs-based DQW structures grown at various growth parameters were studied by secondary ion mass spectroscopy (SIMS). Enhanced Tl incorporation could be obtained using TlGaNAs barriers. A direct relationship between the Tl incorporation and N composition is clearly established by the analysis of the effect of growth temperature, growth rate, ECR power and nitrogen flow rate. The Tl incorporation increased with the increase of Tl flux in the case of DQW structures with TlGaAs barriers. In the case of DQW structures with TIGaNAs barriers, the Tl incorporation reached saturation at some Tl flux, indicating the N enhanced higher Tl incorporation.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124990008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Processing of InP-Based Shallow Ridge Laser Waveguides Using a HBr ICP Plasma 用HBr ICP等离子体加工inp基浅脊激光波导
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381162
S. Bouchoule, S. Azouigui, G. Patriarche, S. Guilet, L. Le Gratiet, A. Martinez, F. Lelarge, A. Ramdane
{"title":"Processing of InP-Based Shallow Ridge Laser Waveguides Using a HBr ICP Plasma","authors":"S. Bouchoule, S. Azouigui, G. Patriarche, S. Guilet, L. Le Gratiet, A. Martinez, F. Lelarge, A. Ramdane","doi":"10.1109/ICIPRM.2007.381162","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381162","url":null,"abstract":"Pure HBr ICP etching is investigated to realize ridge waveguides on InP substrate. The ICP power is the main parameter controlling the anisotropy. Vertical sidewalls, smooth etched surface, and moderate etch rate are obtained under optimized pressure and temperature conditions. The process is applied to the realization of InAs/InP QDs DFB lasers with a lateral metallic Bragg grating.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121054408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High-Speed AlGaInAs-MQW Integrated EA Modulator/DFB Laser Module Based on Identical Epitaxial Layer Scheme for 40 Gb/s Optic Fiber Communication Systems 40gb /s光纤通信系统中基于相同外延层方案的高速AlGaInAs-MQW集成EA /DFB激光模块
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381200
Yi Luo, Pengfei Cai, Changzheng Sun, B. Xiong
{"title":"High-Speed AlGaInAs-MQW Integrated EA Modulator/DFB Laser Module Based on Identical Epitaxial Layer Scheme for 40 Gb/s Optic Fiber Communication Systems","authors":"Yi Luo, Pengfei Cai, Changzheng Sun, B. Xiong","doi":"10.1109/ICIPRM.2007.381200","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381200","url":null,"abstract":"AlGalnAs MQW-DFB laser is monolithically integrated with a lumped-electrode electroabsorption modulator based on an identical epitaxial layer integration scheme. A 3 dBe modulation bandwidth of module over 33 GHz has been demonstrated.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129959767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
GaInNAs Electroabsorption Modulated Laser GaInNAs电吸收调制激光器
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381199
K. Koyama, J. Hashimoto, T. Ishizuka, Y. Tsuji, T. Yamada, C. Fukuda, Y. Onishi, K. Fujii, T. Katsuyama
{"title":"GaInNAs Electroabsorption Modulated Laser","authors":"K. Koyama, J. Hashimoto, T. Ishizuka, Y. Tsuji, T. Yamada, C. Fukuda, Y. Onishi, K. Fujii, T. Katsuyama","doi":"10.1109/ICIPRM.2007.381199","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381199","url":null,"abstract":"We for the first time fabricated an electroabsorption modulated laser (EML) with a GalnNAs multiple quantum well (MQW) active layer using the butt-joint regrowth technique. Single longitudinal mode operation with side-mode suppression ratio (SMSR) of more than 45 dB up to 120degC and the extinction ratio of more than 15 dB up to 100degC were obtained. The 2.5-Gb/s uncooled operation from 25degC to 100degC was successfully demonstrated by changing the EA bias voltage.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131070642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma 电感耦合等离子体制造光电器件用inp基半导体的室温干蚀刻
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381165
Changzheng Sun, Jian Wang, Qiwei Zhou, B. Xiong, Yi Luo
{"title":"Room Temperature Dry Etching of INP-Based Semiconductors for Optoelectronic Device Fabrication Using Inductively Coupled Plasma","authors":"Changzheng Sun, Jian Wang, Qiwei Zhou, B. Xiong, Yi Luo","doi":"10.1109/ICIPRM.2007.381165","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381165","url":null,"abstract":"Dry etching of InP-based semiconductors is carried out by inductively coupled plasma (ICP) for optoelectronic device fabrication. The etching conditions for different chemical mixtures are optimized to ensure high anisotropy and smooth surface morphology.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134382922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Highly Strained InGaAs Quantum Well with GaAs Strain Compensating Layer on InGaAs Ternary Substrate for 1.3 μm Laser 1.3 μm激光InGaAs三元衬底高应变InGaAs量子阱与GaAs应变补偿层
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381168
M. Arai, K. Kinoshita, S. Yoda, Y. Kondo
{"title":"Highly Strained InGaAs Quantum Well with GaAs Strain Compensating Layer on InGaAs Ternary Substrate for 1.3 μm Laser","authors":"M. Arai, K. Kinoshita, S. Yoda, Y. Kondo","doi":"10.1109/ICIPRM.2007.381168","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381168","url":null,"abstract":"We have developed highly strained InGaAs quantum wells (QWs) with a 1.3 μm-band emission on a low indium content InGaAs ternary substrate using low temperature metal-organic vapor phase epitaxy (MOVPE). The indium content of the substrate is 0.1, and this has the advantage of providing good thermal conductivity and good crystal quality. In this study, we newly introduced a binary GaAs barrier layer for strain compensation. We performed photoluminescence (PL) and transmission electron microscope (TEM) measurements to confirm that the crystal quality had improved. We realized a broad area laser with GaAs strain compensation that achieved low threshold current operation.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133455647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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