用HBr ICP等离子体加工inp基浅脊激光波导

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381162

S. Bouchoule, S. Azouigui, G. Patriarche, S. Guilet, L. Le Gratiet, A. Martinez, F. Lelarge, A. Ramdane

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引用次数: 3

摘要

研究了纯HBr ICP刻蚀在InP衬底上实现脊波导的方法。ICP功率是控制各向异性的主要参数。在优化的压力和温度条件下，获得了垂直的侧壁、光滑的蚀刻表面和适中的蚀刻速率。将该工艺应用于带横向金属布拉格光栅的InAs/InP量子点DFB激光器的实现。

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Processing of InP-Based Shallow Ridge Laser Waveguides Using a HBr ICP Plasma

Pure HBr ICP etching is investigated to realize ridge waveguides on InP substrate. The ICP power is the main parameter controlling the anisotropy. Vertical sidewalls, smooth etched surface, and moderate etch rate are obtained under optimized pressure and temperature conditions. The process is applied to the realization of InAs/InP QDs DFB lasers with a lateral metallic Bragg grating.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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