Processing of InP-Based Shallow Ridge Laser Waveguides Using a HBr ICP Plasma

Abstract

Pure HBr ICP etching is investigated to realize ridge waveguides on InP substrate. The ICP power is the main parameter controlling the anisotropy. Vertical sidewalls, smooth etched surface, and moderate etch rate are obtained under optimized pressure and temperature conditions. The process is applied to the realization of InAs/InP QDs DFB lasers with a lateral metallic Bragg grating.