Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fT

Abstract

We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) fabricated using a simple mesa structure. The devices employ a 30 nm highly doped InGaAs base and a 150 nm InP collector containing an InGaAs/InAlAs superlattice grade. These devices exhibit a maximum f_max = 755 GHz with a 416 GHz /f_T. This is the highest f_max reported for a mesa HBT. Through the use of i-line lithography, the emitter junctions have been scaled from 500-600 nm down to 250-300 nm -all while maintaining similar collector to emitter area ratios. Because of the subsequent reduction to the base spreading resistance underneath the emitter R_b,spread and increased radial heat flow from the narrower junction, significant increases to f_max and reductions in device thermal resistance θ_JA are expected and observed. The HBT current gain β ≈ 24-35, BV_ceo = 4.60 V, BV_cbo = 5.34 V, and the devices operate up to 20 mW / μm² before self-heating is observed to affect the DC characteristics.