GaInNAs Electroabsorption Modulated Laser

Abstract

We for the first time fabricated an electroabsorption modulated laser (EML) with a GalnNAs multiple quantum well (MQW) active layer using the butt-joint regrowth technique. Single longitudinal mode operation with side-mode suppression ratio (SMSR) of more than 45 dB up to 120degC and the extinction ratio of more than 15 dB up to 100degC were obtained. The 2.5-Gb/s uncooled operation from 25degC to 100degC was successfully demonstrated by changing the EA bias voltage.