{"title":"40gb /s光纤通信系统中基于相同外延层方案的高速AlGaInAs-MQW集成EA /DFB激光模块","authors":"Yi Luo, Pengfei Cai, Changzheng Sun, B. Xiong","doi":"10.1109/ICIPRM.2007.381200","DOIUrl":null,"url":null,"abstract":"AlGalnAs MQW-DFB laser is monolithically integrated with a lumped-electrode electroabsorption modulator based on an identical epitaxial layer integration scheme. A 3 dBe modulation bandwidth of module over 33 GHz has been demonstrated.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High-Speed AlGaInAs-MQW Integrated EA Modulator/DFB Laser Module Based on Identical Epitaxial Layer Scheme for 40 Gb/s Optic Fiber Communication Systems\",\"authors\":\"Yi Luo, Pengfei Cai, Changzheng Sun, B. Xiong\",\"doi\":\"10.1109/ICIPRM.2007.381200\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGalnAs MQW-DFB laser is monolithically integrated with a lumped-electrode electroabsorption modulator based on an identical epitaxial layer integration scheme. A 3 dBe modulation bandwidth of module over 33 GHz has been demonstrated.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381200\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-Speed AlGaInAs-MQW Integrated EA Modulator/DFB Laser Module Based on Identical Epitaxial Layer Scheme for 40 Gb/s Optic Fiber Communication Systems
AlGalnAs MQW-DFB laser is monolithically integrated with a lumped-electrode electroabsorption modulator based on an identical epitaxial layer integration scheme. A 3 dBe modulation bandwidth of module over 33 GHz has been demonstrated.