GaInNAs电吸收调制激光器

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381199

K. Koyama, J. Hashimoto, T. Ishizuka, Y. Tsuji, T. Yamada, C. Fukuda, Y. Onishi, K. Fujii, T. Katsuyama

{"title":"GaInNAs电吸收调制激光器","authors":"K. Koyama, J. Hashimoto, T. Ishizuka, Y. Tsuji, T. Yamada, C. Fukuda, Y. Onishi, K. Fujii, T. Katsuyama","doi":"10.1109/ICIPRM.2007.381199","DOIUrl":null,"url":null,"abstract":"We for the first time fabricated an electroabsorption modulated laser (EML) with a GalnNAs multiple quantum well (MQW) active layer using the butt-joint regrowth technique. Single longitudinal mode operation with side-mode suppression ratio (SMSR) of more than 45 dB up to 120degC and the extinction ratio of more than 15 dB up to 100degC were obtained. The 2.5-Gb/s uncooled operation from 25degC to 100degC was successfully demonstrated by changing the EA bias voltage.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"99 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"GaInNAs Electroabsorption Modulated Laser\",\"authors\":\"K. Koyama, J. Hashimoto, T. Ishizuka, Y. Tsuji, T. Yamada, C. Fukuda, Y. Onishi, K. Fujii, T. Katsuyama\",\"doi\":\"10.1109/ICIPRM.2007.381199\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We for the first time fabricated an electroabsorption modulated laser (EML) with a GalnNAs multiple quantum well (MQW) active layer using the butt-joint regrowth technique. Single longitudinal mode operation with side-mode suppression ratio (SMSR) of more than 45 dB up to 120degC and the extinction ratio of more than 15 dB up to 100degC were obtained. The 2.5-Gb/s uncooled operation from 25degC to 100degC was successfully demonstrated by changing the EA bias voltage.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"99 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381199\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文首次利用对接再生技术制备了GalnNAs多量子阱有源层的电吸收调制激光器(EML)。单纵模工作，在120℃时侧模抑制比(SMSR)大于45 dB，在100℃时消光比大于15 dB。通过改变EA偏置电压，成功地演示了从25℃到100℃的2.5 gb /s非冷却工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaInNAs Electroabsorption Modulated Laser

We for the first time fabricated an electroabsorption modulated laser (EML) with a GalnNAs multiple quantum well (MQW) active layer using the butt-joint regrowth technique. Single longitudinal mode operation with side-mode suppression ratio (SMSR) of more than 45 dB up to 120degC and the extinction ratio of more than 15 dB up to 100degC were obtained. The 2.5-Gb/s uncooled operation from 25degC to 100degC was successfully demonstrated by changing the EA bias voltage.

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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