超越CMOS: InGaAs hemt的逻辑适用性

J. A. D. Alamo, Dae-Hyun Kim
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引用次数: 9

摘要

30多年来,Si CMOS缩放带来了芯片密度,速度和功耗的指数级改进。随着CMOS迅速接近基本极限,“微电子革命”受到威胁。重振逻辑技术的一种方法是引入具有改进传输特性的新通道材料。在这方面,III-V化合物半导体,特别是具有高InAs组成的InGaAs是非常有前途的。本文综述了III-V型电路在逻辑应用中的优点和挑战。它还总结了作者最近在研究InGaAs hemt的逻辑适用性方面所做的工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Beyond CMOS: Logic Suitability of InGaAs HEMTs
For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the "microelectronics revolution" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular, InGaAs with high InAs compositions are very promising. This paper reviews the merits and challenges of III-V's for logic applications. It also summarizes recent work of the authors in investigating the logic suitability of InGaAs HEMTs.
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