{"title":"超越CMOS: InGaAs hemt的逻辑适用性","authors":"J. A. D. Alamo, Dae-Hyun Kim","doi":"10.1109/ICIPRM.2007.381120","DOIUrl":null,"url":null,"abstract":"For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the \"microelectronics revolution\" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular, InGaAs with high InAs compositions are very promising. This paper reviews the merits and challenges of III-V's for logic applications. It also summarizes recent work of the authors in investigating the logic suitability of InGaAs HEMTs.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Beyond CMOS: Logic Suitability of InGaAs HEMTs\",\"authors\":\"J. A. D. Alamo, Dae-Hyun Kim\",\"doi\":\"10.1109/ICIPRM.2007.381120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the \\\"microelectronics revolution\\\" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular, InGaAs with high InAs compositions are very promising. This paper reviews the merits and challenges of III-V's for logic applications. It also summarizes recent work of the authors in investigating the logic suitability of InGaAs HEMTs.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381120\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
For over 30 years, Si CMOS scaling has brought along exponential improvements in chip density, speed and power consumption. With CMOS rapidly approaching fundamental limits, the "microelectronics revolution" is threatened. A way to reinvigorate logic technology is to introduce new channel materials with improved transport properties. In this, III-V compound semiconductors and, in particular, InGaAs with high InAs compositions are very promising. This paper reviews the merits and challenges of III-V's for logic applications. It also summarizes recent work of the authors in investigating the logic suitability of InGaAs HEMTs.