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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials最新文献

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Study on Growth of Mg-doped N-polar InN by RF-MBE and its Electrical Properties RF-MBE生长掺杂mg的n极性InN及其电学性质的研究
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381148
D. Muto, H. Naoi, S. Takado, T. Araki, Y. Nanishi
{"title":"Study on Growth of Mg-doped N-polar InN by RF-MBE and its Electrical Properties","authors":"D. Muto, H. Naoi, S. Takado, T. Araki, Y. Nanishi","doi":"10.1109/ICIPRM.2007.381148","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381148","url":null,"abstract":"InN films were grown by RF-MBE on (0001) sapphire substrates. Nitridation of the sapphire substrate prior to growth was carried out at 280degC for 2 hours. After a low-temperature InN buffer layer was deposited at 280degC for 10 min, InN intermediate layer was grown at 530degC for 10 min. Then, non-and Mg-doped InN layers were grown at 530degC for 1 hour under a nitrogen-rich condition. Mg was supplied by a conventional effusion cell at 130, 135, or 140degC. The thicknesses of the InN films were around 420 nm. All InN films were characterized using XRD, SEM, and Hall-effect measurements.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133050025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
30-GBPs Transmission Over 100 M-MMFs (GI32) Using 1.1 μM-Range VCSELs and Receivers 使用1.1 μ m范围的vcsel和接收器，在100 M-MMFs (GI32)上传输30gbps
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381217
K. Fukatsu, K. Shiba, Y. Suzuki, N. Suzuki, H. Hatakeyama, T. Anan, K. Yashiki, M. Tsuji
{"title":"30-GBPs Transmission Over 100 M-MMFs (GI32) Using 1.1 μM-Range VCSELs and Receivers","authors":"K. Fukatsu, K. Shiba, Y. Suzuki, N. Suzuki, H. Hatakeyama, T. Anan, K. Yashiki, M. Tsuji","doi":"10.1109/ICIPRM.2007.381217","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381217","url":null,"abstract":"We demonstrate 30-Gb/s transmission using 1.1 μm-range VCSELs based on InGaAs/GaAs quantum wells, back-illuminated InGaAs PDs, and TIAs (InP-HBT). Error-free 30-Gbps transmission with 100 m-MMFs (GI32) is achieved for the first time.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"12 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133110812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Desorption Time of As Adsorbed on GaInAs Surface Analyzed by X-ray CTR Scattering 用x射线CTR散射分析砷在GaInAs表面的解吸时间
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381187
A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, Y. Takeda
{"title":"Desorption Time of As Adsorbed on GaInAs Surface Analyzed by X-ray CTR Scattering","authors":"A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, Y. Takeda","doi":"10.1109/ICIPRM.2007.381187","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381187","url":null,"abstract":"Compositional grading at hetero-interfaces in InP/Ga<sub>0.47</sub>In<sub>0.53</sub>As/InP structures was investigated utilizing X-ray CTR (crystal truncation rod) scattering method. InP/ Ga<sub>0.47</sub>In<sub>0.53</sub>As/InP structures were grown on InP(001) substrate by OMVPE (organometallic vapor phase epitaxy). TBAs-, H<sub>2</sub>-, and TBP-flushing were carried out with various flushing times after the growth of the GaInAs layers. The CTR analysis showed the desorption lifetimes of As in TBAs, H<sub>2</sub>, and TBP atmosphere are about 23, 22, and 6 s, respectively.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"78 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113954234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Proton Radiation Effects in High-Power GaInP/AlGaInP Semiconductor Lasers 高能GaInP/AlGaInP半导体激光器中的质子辐射效应
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381169
S. Gonda, H. Tsutsumi, Y. Ito, K. Kume, R. Ishigami, T. Makino, T. Morita, H. Kan
{"title":"Proton Radiation Effects in High-Power GaInP/AlGaInP Semiconductor Lasers","authors":"S. Gonda, H. Tsutsumi, Y. Ito, K. Kume, R. Ishigami, T. Makino, T. Morita, H. Kan","doi":"10.1109/ICIPRM.2007.381169","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381169","url":null,"abstract":"High-power GalnP/AlGalnP broad-stripe lasers were irradiated with 200- and 10-MeV protons. The normalized threshold current linearly increases with increasing proton fluence. In GalnP lasers smaller increase in the threshold current was observed compared with high-power AlGaAs lasers. Proton energy dependence of the threshold current damage factor and forward bias annealing are discussed.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114066826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Compact Thermal-Via Packaging Design of GaInP/GaAs Collector-Up HBTs in Small High-Power Amplifiers 小型大功率放大器中GaInP/GaAs集电极HBTs的紧凑热通封装设计
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381147
P.H. Lee, J. Chou, H. Tseng
{"title":"A Compact Thermal-Via Packaging Design of GaInP/GaAs Collector-Up HBTs in Small High-Power Amplifiers","authors":"P.H. Lee, J. Chou, H. Tseng","doi":"10.1109/ICIPRM.2007.381147","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381147","url":null,"abstract":"We model the thermal performance of the large thermal via which under the collector-up heterojunction bipolar transistor (HBT) by using a finite element method. A compact thermal-via packaging of GaInP/GaAs collector-up HBTs has been designed and calculated. The results indicate that the configuration can be further reduced by 29% to meet the requirement of small high-power amplifiers for cellular-phone communication systems.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134156347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Kirk Effect in Type-II InP/GaAsSb DHBTs with a Collector Doping Spike 具有集电极掺杂尖峰的ii型InP/GaAsSb dhbt中的Kirk效应
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381211
H.G. Liu, Y. Zeng, O. Ostinelli, C. Bolognesi
{"title":"Kirk Effect in Type-II InP/GaAsSb DHBTs with a Collector Doping Spike","authors":"H.G. Liu, Y. Zeng, O. Ostinelli, C. Bolognesi","doi":"10.1109/ICIPRM.2007.381211","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381211","url":null,"abstract":"The Kirk effect in type-II InP/GaAsSb DHBTs with spike-doped collectors is studied experimentally and theoretically. Accurate two-dimensional hydrodynamic (2D-HD) physical device simulations show that the Kirk threshold current in type-II DHBTs depends on negative conduction band offset (DeltaEC) and is a function of the doping spike position in the InP collector. The optimal collector design can significantly increase the Kirk current limit and the peak fT, without significantly reducing BVCEO.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133774129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Current Status and Prospects of Photonic IC Technology 光子集成电路技术的现状与展望
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.380674
M. Smit, E. Bente, M. Hill, F. Karouta, X. Leijtens, Y. Oei, J. V. D. van der Tol, R. Notzel, P. Koenraad, H. Dorren, H. de Waardt, A. Koonen, G. Khoe
{"title":"Current Status and Prospects of Photonic IC Technology","authors":"M. Smit, E. Bente, M. Hill, F. Karouta, X. Leijtens, Y. Oei, J. V. D. van der Tol, R. Notzel, P. Koenraad, H. Dorren, H. de Waardt, A. Koonen, G. Khoe","doi":"10.1109/ICIPRM.2007.380674","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.380674","url":null,"abstract":"The most complex photonic ICs today have been developed for WDM applications. An overview of the most important integration technologies will be given and recent developments towards broader applications and higher integration densities will be discussed.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121841454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
50 nm MHEMT Technology for G- and H-Band MMICs 50nm MHEMT技术，用于G波段和h波段MHEMT
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.380680
A. Leuther, A. Tessmann, M. Dammann, C. Schworer, M. Schlechtweg, M. Mikulla, R. Losch, G. Weimann
{"title":"50 nm MHEMT Technology for G- and H-Band MMICs","authors":"A. Leuther, A. Tessmann, M. Dammann, C. Schworer, M. Schlechtweg, M. Mikulla, R. Losch, G. Weimann","doi":"10.1109/ICIPRM.2007.380680","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.380680","url":null,"abstract":"A metamorphic HEMT (MHEMT) MMIC technology including circuit applications is presented. The MHEMT layers are MBE grown on 4-inch GaAs wafers. The technology is based on a 50 nm gate length MHEMT and includes a 50 mum substrate backside process with dry etched through-substrate vias. For the electron confinement an ln<sub>0.8</sub>Ga<sub>0.2</sub>As/ln<sub>0.53</sub>Ga<sub>0.47</sub>As composite channel was used. The devices are passivated with BCB and SiN to achieve a median time-to-failure of 2.7 times 10<sup>6</sup> h in air. Cut-off frequencies f<sub>t</sub> and f<sub>max</sub> of 375 GHz were extrapolated for a 2 times 15 mum gate width device. Low-noise amplifiers with more than 15 dB gain in the frequency range from 192 GHz to 235 GHz were realized.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"28 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123424930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 85
Structural and Optical Characteristics of Strain-mediated InGaAs Quantum Dots 应变介导InGaAs量子点的结构和光学特性
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381153
C.Y. Chen, D. Feng, T. Tzeng, T. Lay, T. Chang
{"title":"Structural and Optical Characteristics of Strain-mediated InGaAs Quantum Dots","authors":"C.Y. Chen, D. Feng, T. Tzeng, T. Lay, T. Chang","doi":"10.1109/ICIPRM.2007.381153","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381153","url":null,"abstract":"Self-assembled In<sub>x</sub>Ga<sub>1-x</sub>As quantum dots, with In(Ga)As capping layers to mediate the strain distribution were studied by x-ray reciprocal space mapping, TEM, and PL. The In<sub>0.75</sub>Ga<sub>0.25</sub>As QDs capped with In<sub>0.1</sub>Ga<sub>0.9</sub>As has a PL emission at lambda = 1.31 mum.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121937772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
200-km 10-Gbit/s Optical Duobinary Transmission Using an n-i-n InP Mach-Zehnder Modulator 使用n-i-n InP马赫曾德调制器的200公里10 gbit /s光双二进制传输
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381198
T. Kurosaki, Y. Shibata, N. Kikuchi, K. Tsuzuki, W. Kobayashi, H. Yasaka, K. Kato
{"title":"200-km 10-Gbit/s Optical Duobinary Transmission Using an n-i-n InP Mach-Zehnder Modulator","authors":"T. Kurosaki, Y. Shibata, N. Kikuchi, K. Tsuzuki, W. Kobayashi, H. Yasaka, K. Kato","doi":"10.1109/ICIPRM.2007.381198","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381198","url":null,"abstract":"We have demonstrated 10-Gbit/s optical duobinary transmission using an n-i-n InP Mach-Zehnder modulator. A 200-km single-mode fiber transmission with no bit-error-rate floor and small sensitivity penalty was achieved under push-pull operation with low-driving voltage (<3 V).","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125061552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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