RF-MBE生长掺杂mg的n极性InN及其电学性质的研究

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381148

D. Muto, H. Naoi, S. Takado, T. Araki, Y. Nanishi

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引用次数: 0

摘要

用RF-MBE在(0001)蓝宝石衬底上生长InN薄膜。生长前蓝宝石衬底的氮化在280℃下进行2小时。低温InN缓冲层在280℃下沉积10 min后，在530℃下生长10 min，然后在530℃下富氮条件下生长1 h，不掺杂和mg掺杂的InN层。Mg由传统的积液池在130、135或140℃下提供。InN膜的厚度约为420 nm。采用XRD, SEM和霍尔效应测量对所有InN薄膜进行了表征。

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Study on Growth of Mg-doped N-polar InN by RF-MBE and its Electrical Properties

InN films were grown by RF-MBE on (0001) sapphire substrates. Nitridation of the sapphire substrate prior to growth was carried out at 280degC for 2 hours. After a low-temperature InN buffer layer was deposited at 280degC for 10 min, InN intermediate layer was grown at 530degC for 10 min. Then, non-and Mg-doped InN layers were grown at 530degC for 1 hour under a nitrogen-rich condition. Mg was supplied by a conventional effusion cell at 130, 135, or 140degC. The thicknesses of the InN films were around 420 nm. All InN films were characterized using XRD, SEM, and Hall-effect measurements.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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