应变介导InGaAs量子点的结构和光学特性

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381153

C.Y. Chen, D. Feng, T. Tzeng, T. Lay, T. Chang

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引用次数: 0

摘要

利用x射线倒易空间映射、TEM和PL研究了自组装InxGa1-xAs量子点的应变分布，用In0.1Ga0.9As包覆的In0.75Ga0.25As量子点在λ = 1.31 mum处的PL发射。

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Structural and Optical Characteristics of Strain-mediated InGaAs Quantum Dots

Self-assembled In_xGa_1-xAs quantum dots, with In(Ga)As capping layers to mediate the strain distribution were studied by x-ray reciprocal space mapping, TEM, and PL. The In_0.75Ga_0.25As QDs capped with In_0.1Ga_0.9As has a PL emission at lambda = 1.31 mum.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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