具有集电极掺杂尖峰的ii型InP/GaAsSb dhbt中的Kirk效应

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381211

H.G. Liu, Y. Zeng, O. Ostinelli, C. Bolognesi

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引用次数: 2

摘要

本文从实验和理论两方面研究了带尖峰掺杂集热器的ii型InP/GaAsSb dhbt的Kirk效应。精确的二维流体力学(2D-HD)物理设备模拟表明，ii型DHBTs中的Kirk阈值电流取决于负导带偏置(DeltaEC)，并且是InP集电极中掺杂尖峰位置的函数。优化的集电极设计可以显著提高柯克电流极限和峰值fT，而不显著降低BVCEO。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Kirk Effect in Type-II InP/GaAsSb DHBTs with a Collector Doping Spike

The Kirk effect in type-II InP/GaAsSb DHBTs with spike-doped collectors is studied experimentally and theoretically. Accurate two-dimensional hydrodynamic (2D-HD) physical device simulations show that the Kirk threshold current in type-II DHBTs depends on negative conduction band offset (DeltaEC) and is a function of the doping spike position in the InP collector. The optimal collector design can significantly increase the Kirk current limit and the peak fT, without significantly reducing BVCEO.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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