Desorption Time of As Adsorbed on GaInAs Surface Analyzed by X-ray CTR Scattering

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381187

A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, Y. Takeda

引用次数: 1

Abstract

Compositional grading at hetero-interfaces in InP/Ga_0.47In_0.53As/InP structures was investigated utilizing X-ray CTR (crystal truncation rod) scattering method. InP/ Ga_0.47In_0.53As/InP structures were grown on InP(001) substrate by OMVPE (organometallic vapor phase epitaxy). TBAs-, H₂-, and TBP-flushing were carried out with various flushing times after the growth of the GaInAs layers. The CTR analysis showed the desorption lifetimes of As in TBAs, H₂, and TBP atmosphere are about 23, 22, and 6 s, respectively.

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用x射线CTR散射分析砷在GaInAs表面的解吸时间

利用x射线CTR(晶体截断棒)散射法研究了InP/Ga0.47In0.53As/InP结构异质界面上的成分分级。采用OMVPE(有机金属气相外延)技术在InP(001)衬底上生长了InP/ Ga0.47In0.53As/InP结构。在GaInAs层生长后，通过不同的冲洗时间对TBAs-、H2-和tbp -进行冲洗。CTR分析表明，As在TBAs、H2和TBP气氛中的解吸寿命分别为23、22和6 s。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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