高能GaInP/AlGaInP半导体激光器中的质子辐射效应

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381169

S. Gonda, H. Tsutsumi, Y. Ito, K. Kume, R. Ishigami, T. Makino, T. Morita, H. Kan

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引用次数: 0

摘要

用200 mev和10 mev质子辐照高功率GalnP/AlGalnP宽条纹激光器。归一化阈值电流随质子通量的增加而线性增加。与高功率AlGaAs激光器相比，GalnP激光器的阈值电流增幅较小。讨论了阈值电流损伤因子对质子能量的依赖性和正向偏置退火。

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Proton Radiation Effects in High-Power GaInP/AlGaInP Semiconductor Lasers

High-power GalnP/AlGalnP broad-stripe lasers were irradiated with 200- and 10-MeV protons. The normalized threshold current linearly increases with increasing proton fluence. In GalnP lasers smaller increase in the threshold current was observed compared with high-power AlGaAs lasers. Proton energy dependence of the threshold current damage factor and forward bias annealing are discussed.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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