Study on Growth of Mg-doped N-polar InN by RF-MBE and its Electrical Properties

Abstract

InN films were grown by RF-MBE on (0001) sapphire substrates. Nitridation of the sapphire substrate prior to growth was carried out at 280degC for 2 hours. After a low-temperature InN buffer layer was deposited at 280degC for 10 min, InN intermediate layer was grown at 530degC for 10 min. Then, non-and Mg-doped InN layers were grown at 530degC for 1 hour under a nitrogen-rich condition. Mg was supplied by a conventional effusion cell at 130, 135, or 140degC. The thicknesses of the InN films were around 420 nm. All InN films were characterized using XRD, SEM, and Hall-effect measurements.